Description: 117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor / 117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(84) forming from vapor or gaseous state (e.g., vpe, sublimation) (88) with decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., cvd) (89) including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing) (90) with pretreatment of substrate (e.g., coacting ablating)
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