USPC Class Details

Description: 216 etching a substrate: processes / 216 etching a substrate: processes/(58) gas phase etching of substrate (63) application of energy to the gaseous etchant or to the substrate being etched (67) using plasma (71) specific configuration of electrodes to generate the plasma

Hierarchy/Derived subclasses

216 / 58

-> 63

-> 67

-> 71

uspto searches

Patent Apps in 216/71

Granted Patents in 216/71

Use the links above or do an advanced search in ppubs for:
(216/71.ccls.)

This will show what classes derive from the input. Ex: entering 43/42.24 shows the derived classes and the search that can be used to find patents or patent applications in those subclasses.

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