USPC Class Details

Description: 216 etching a substrate: processes / 216 etching a substrate: processes/(83) nongaseous phase etching of substrate (90) relative movement between the substrate and a confined pool of etchant (91) rotating, repeated dipping, or advancing movement of substrate

Hierarchy/Derived subclasses

216 / 83-> 90-> 91

uspto searches

Patent Apps in 216/91

Granted Patents in 216/91

Use the links above or do an advanced search in ppubs for:
(216/91.ccls.)

This will show what classes derive from the input. Ex: entering 43/42.24 shows the derived classes and the search that can be used to find patents or patent applications in those subclasses.
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