Description: 257 active solid-state devices (e.g., transistors, solid-state diodes) / 257 active solid-state devices (e.g., transistors, solid-state diodes)/(49) non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) (52) amorphous semiconductor material (57) field effect device in amorphous semiconductor material (60) with field electrode under or on a side edge of amorphous semiconductor material (e.g., vertical current path)
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