USPC Patent Classifications

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Class 117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
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117/1117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(1) processes joining independent crystals
117/2117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(2) processes of growth with a subsequent step acting on the crystal to adjust the impurity amount (e.g., diffusing, doping, gettering, implanting)
117/3117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(3) processes of growth with a subsequent step of heat treating or deliberate controlled cooling of the single-crystal
117/4117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(4) processes of growth from solid or gel state (e.g., solid phase recrystallization)
117/5117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(4) processes of growth from solid or gel state (e.g., solid phase recrystallization) (5) organic product
117/6117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(4) processes of growth from solid or gel state (e.g., solid phase recrystallization) (6) at pressure above 1 atmosphere
117/7117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(4) processes of growth from solid or gel state (e.g., solid phase recrystallization) (7) using heat (e.g., strain annealing)
117/8117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(4) processes of growth from solid or gel state (e.g., solid phase recrystallization) (7) using heat (e.g., strain annealing) (8) of amorphous precursor
117/9117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(4) processes of growth from solid or gel state (e.g., solid phase recrystallization) (7) using heat (e.g., strain annealing) (9) epitaxy formation
117/10117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(4) processes of growth from solid or gel state (e.g., solid phase recrystallization) (7) using heat (e.g., strain annealing) (10) using temperature gradient (e.g., moving zone recrystallization)
117/11117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state
117/12117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (12) crucibleless process having movement of discrete droplets or solid particles to thin-film precursor (e.g., verneuil method)
117/13117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (13) having pulling during growth (e.g., czochralski method, zone drawing)
117/14117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (13) having pulling during growth (e.g., czochralski method, zone drawing) (14) with a step of measuring, testing, or sensing (e.g., using tv, photo, or x-ray detector or weight changes)
117/15117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (13) having pulling during growth (e.g., czochralski method, zone drawing) (14) with a step of measuring, testing, or sensing (e.g., using tv, photo, or x-ray detector or weight changes) (15) with responsive control
117/16117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (13) having pulling during growth (e.g., czochralski method, zone drawing) (14) with a step of measuring, testing, or sensing (e.g., using tv, photo, or x-ray detector or weight changes) (15) with responsive control (16) shape defined by a solid member other than seed or product (e.g., edge-defined film-fed growth, stepanov method)
117/17117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (13) having pulling during growth (e.g., czochralski method, zone drawing) (17) with contact with an immiscible liquid (e.g., lec)
117/18117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (13) having pulling during growth (e.g., czochralski method, zone drawing) (17) with contact with an immiscible liquid (e.g., lec) (18) using a sectioned crucible or providing replenishment of precursor
117/19117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (13) having pulling during growth (e.g., czochralski method, zone drawing) (19) forming an intended mixture (excluding mixed crystal) (e.g., doped)
117/20117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (13) having pulling during growth (e.g., czochralski method, zone drawing) (19) forming an intended mixture (excluding mixed crystal) (e.g., doped) (20) comprising a silicon crystal with oxygen containing impurity
117/21117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (13) having pulling during growth (e.g., czochralski method, zone drawing) (19) forming an intended mixture (excluding mixed crystal) (e.g., doped) (21) comprising a semiconductor with a charge carrier impurity
117/22117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (13) having pulling during growth (e.g., czochralski method, zone drawing) (19) forming an intended mixture (excluding mixed crystal) (e.g., doped) (21) comprising a semiconductor with a charge carrier impurity (22) forming adjoining crystals of different compositions (e.g., junction)
117/23117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (13) having pulling during growth (e.g., czochralski method, zone drawing) (23) shape defined by a solid member other than seed or product (e.g., edge-defined film-fed growth, stepanov method)
117/24117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (13) having pulling during growth (e.g., czochralski method, zone drawing) (23) shape defined by a solid member other than seed or product (e.g., edge-defined film-fed growth, stepanov method) (24) embedded in product (e.g., string-stabilized web)
117/25117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (13) having pulling during growth (e.g., czochralski method, zone drawing) (23) shape defined by a solid member other than seed or product (e.g., edge-defined film-fed growth, stepanov method) (25) defines a product with a hollow structure (e.g., tube)
117/26117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (13) having pulling during growth (e.g., czochralski method, zone drawing) (23) shape defined by a solid member other than seed or product (e.g., edge-defined film-fed growth, stepanov method) (26) defines a flat product
117/27117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (13) having pulling during growth (e.g., czochralski method, zone drawing) (23) shape defined by a solid member other than seed or product (e.g., edge-defined film-fed growth, stepanov method) (26) defines a flat product (27) pulling includes a horizontal component
117/28117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (13) having pulling during growth (e.g., czochralski method, zone drawing) (28) including non-coincident axes of rotation (e.g., relative eccentric)
117/29117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (13) having pulling during growth (e.g., czochralski method, zone drawing) (29) passing non-induced electric current through a crystal-liquid interface (e.g., peltier)
117/30117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (13) having pulling during growth (e.g., czochralski method, zone drawing) (30) with liquid flow control or manipulation during growth (e.g., mixing, replenishing, magnetic levitation, stabilization, convection control, baffle)
117/31117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (13) having pulling during growth (e.g., czochralski method, zone drawing) (30) with liquid flow control or manipulation during growth (e.g., mixing, replenishing, magnetic levitation, stabilization, convection control, baffle) (31) including a sectioned crucible (e.g., double crucible, baffle)
117/32117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (13) having pulling during growth (e.g., czochralski method, zone drawing) (30) with liquid flow control or manipulation during growth (e.g., mixing, replenishing, magnetic levitation, stabilization, convection control, baffle) (32) using a magnetic field
117/33117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (13) having pulling during growth (e.g., czochralski method, zone drawing) (30) with liquid flow control or manipulation during growth (e.g., mixing, replenishing, magnetic levitation, stabilization, convection control, baffle) (33) replenishing of precursor during growth (e.g., continuous method, zone pulling)
117/34117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (13) having pulling during growth (e.g., czochralski method, zone drawing) (30) with liquid flow control or manipulation during growth (e.g., mixing, replenishing, magnetic levitation, stabilization, convection control, baffle) (33) replenishing of precursor during growth (e.g., continuous method, zone pulling) (34) including significant cooling or heating detail
117/35117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (13) having pulling during growth (e.g., czochralski method, zone drawing) (35) with a significant technique for (a) preliminary preparation or growth starting or (b) product handling or growth ending (e.g., arrangement of or crystallography of seed)
117/36117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (13) having pulling during growth (e.g., czochralski method, zone drawing) (36) precursor intentionally contains an excess component or a non-product appearing component (e.g., solvent, flux, crystal lattice modifier)
117/37117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (37) having moving solid-liquid-solid region
117/38117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (37) having moving solid-liquid-solid region (38) including a step of measuring, testing, or sensing
117/39117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (37) having moving solid-liquid-solid region (38) including a step of measuring, testing, or sensing (39) with responsive control
117/40117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (37) having moving solid-liquid-solid region (40) liquid precursor penetrating only a portion of a single-crystal, thereby liquefying it, and single-crystal formation therefrom which adjoins the never-liquefied portion of the single-crystal (e.g., liquid wire migration)
117/41117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (37) having moving solid-liquid-solid region (41) precursor composition intentionally different from product (e.g., excess component, non-product forming component, dopant, non-stoichiometric precursor, travelling solvent, flux)
117/42117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (37) having moving solid-liquid-solid region (41) precursor composition intentionally different from product (e.g., excess component, non-product forming component, dopant, non-stoichiometric precursor, travelling solvent, flux) (42) product has an element in common with the unusable residual portion
117/43117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (37) having moving solid-liquid-solid region (43) distinctly layered product (e.g., twin, soi, epitaxial crystallization)
117/44117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (37) having moving solid-liquid-solid region (43) distinctly layered product (e.g., twin, soi, epitaxial crystallization) (44) adjacent single-crystal product regions separately formed (e.g., multiple non-coextensive passes of a scanning laser)
117/45117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (37) having moving solid-liquid-solid region (43) distinctly layered product (e.g., twin, soi, epitaxial crystallization) (45) non-planar crystal grown (e.g., elo)
117/46117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (37) having moving solid-liquid-solid region (46) movement includes a horizontal component
117/47117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (37) having moving solid-liquid-solid region (47) flat, free-standing (i.e., substrate-free) product (e.g., ribbon, film, sheet)
117/48117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (37) having moving solid-liquid-solid region (48) solid heating means contacting the liquid (e.g., immersed)
117/49117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (37) having moving solid-liquid-solid region (49) liquid zone contacts only precursor and product solids (e.g., crucibleless, liquid encapsulant, float zone)
117/50117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (37) having moving solid-liquid-solid region (49) liquid zone contacts only precursor and product solids (e.g., crucibleless, liquid encapsulant, float zone) (50) liquefying by energy from an electromagnetic wave or electromagnetic particle or arc or plasma (e.g., radiant heat)
117/51117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (37) having moving solid-liquid-solid region (49) liquid zone contacts only precursor and product solids (e.g., crucibleless, liquid encapsulant, float zone) (50) liquefying by energy from an electromagnetic wave or electromagnetic particle or arc or plasma (e.g., radiant heat) (51) electromagnetic induction
117/52117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (37) having moving solid-liquid-solid region (49) liquid zone contacts only precursor and product solids (e.g., crucibleless, liquid encapsulant, float zone) (50) liquefying by energy from an electromagnetic wave or electromagnetic particle or arc or plasma (e.g., radiant heat) (51) electromagnetic induction (52) with liquid control (e.g., vibration damping, stabilizing, melt levitation focusing coil)
117/53117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (53) forming a single-crystal region by liquefying a region of a single-crystal and adjusting the composition of the liquid (e.g., alloying, regrowth)
117/54117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (54) liquid phase epitaxial growth (lpe)
117/55117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (54) liquid phase epitaxial growth (lpe) (55) with a step of measuring, testing, or sensing
117/56117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (54) liquid phase epitaxial growth (lpe) (56) including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing)
117/57117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (54) liquid phase epitaxial growth (lpe) (56) including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing) (57) including a sliding boat system
117/58117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (54) liquid phase epitaxial growth (lpe) (58) with pretreatment of epitaxy substrate (e.g., autodoping control, cleaning, polishing, leveling, masking)
117/59117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (54) liquid phase epitaxial growth (lpe) (59) including a tipping system (e.g., rotation, pivoting)
117/60117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (54) liquid phase epitaxial growth (lpe) (60) including a vertical dipping system
117/61117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (54) liquid phase epitaxial growth (lpe) (61) including a sliding boat system
117/62117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (54) liquid phase epitaxial growth (lpe) (62) electric current controlled or induced growth
117/63117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (54) liquid phase epitaxial growth (lpe) (63) characterized by specified crystallography of the substrate
117/64117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (54) liquid phase epitaxial growth (lpe) (64) precursor composition intentionally contains an excess component or a non-product appearing component (e.g., solvent, flux)
117/65117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (54) liquid phase epitaxial growth (lpe) (64) precursor composition intentionally contains an excess component or a non-product appearing component (e.g., solvent, flux) (65) having an element in common
117/66117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (54) liquid phase epitaxial growth (lpe) (64) precursor composition intentionally contains an excess component or a non-product appearing component (e.g., solvent, flux) (65) having an element in common (66) excess component or non-product appearing component contains an oxygen atom (e.g., hydrothermal)
117/67117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (54) liquid phase epitaxial growth (lpe) (64) precursor composition intentionally contains an excess component or a non-product appearing component (e.g., solvent, flux) (65) having an element in common (67) excess component or non-product appearing component contains a metal atom
117/68117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (68) having growth from a solution comprising a solvent which is liquid at or below 20 degrees celsius (e.g., aqueous solution)
117/69117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (68) having growth from a solution comprising a solvent which is liquid at or below 20 degrees celsius (e.g., aqueous solution) (69) with a step of measuring, testing, or sensing
117/70117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (68) having growth from a solution comprising a solvent which is liquid at or below 20 degrees celsius (e.g., aqueous solution) (70) growth accompanied by material removal (other than the product) from solution (e.g., solvent evaporation, osmosis)
117/71117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (68) having growth from a solution comprising a solvent which is liquid at or below 20 degrees celsius (e.g., aqueous solution) (71) at pressure above 1 atmosphere (e.g., hydrothermal processes)
117/72117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (68) having growth from a solution comprising a solvent which is liquid at or below 20 degrees celsius (e.g., aqueous solution) (71) at pressure above 1 atmosphere (e.g., hydrothermal processes) (72) quartz (sio2) product
117/73117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (73) havin growth from molten state (e.g., solution melt)
117/74117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (73) havin growth from molten state (e.g., solution melt) (74) including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing)
117/75117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (73) havin growth from molten state (e.g., solution melt) (75) forming a platelet shape or a small diameter, elongate, generally cylindrical shape (e.g., whisker, fiber, needle, filament) (e.g., vls method)
117/76117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (73) havin growth from molten state (e.g., solution melt) (76) using a scavenger agent (e.g., remove, add, deplete, or redistribute impurity or dopant)
117/77117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (73) havin growth from molten state (e.g., solution melt) (77) gas or vapor state precursor or overpressure
117/78117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (73) havin growth from molten state (e.g., solution melt) (78) precursor composition intentionally different from product (e.g., excess component, non-product forming component, dopant, non-stoichiometric precursor, solvent, flux)
117/79117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (73) havin growth from molten state (e.g., solution melt) (78) precursor composition intentionally different from product (e.g., excess component, non-product forming component, dopant, non-stoichiometric precursor, solvent, flux) (79) unusable portion contains a metal atom (e.g., diamond or cbn growth in metal solvent)
117/80117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (73) havin growth from molten state (e.g., solution melt) (78) precursor composition intentionally different from product (e.g., excess component, non-product forming component, dopant, non-stoichiometric precursor, solvent, flux) (80) unusable portion contains an oxygen atom (e.g., oxide flux)
117/81117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (73) havin growth from molten state (e.g., solution melt) (81) growth confined by a solid member other than seed or product (e.g., bridgman-stockbarger method)
117/82117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (73) havin growth from molten state (e.g., solution melt) (81) growth confined by a solid member other than seed or product (e.g., bridgman-stockbarger method) (82) including vertical precursor-product interface (e.g., horizontal bridgman)
117/83117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(11) processes of growth from liquid or supercritical state (73) havin growth from molten state (e.g., solution melt) (81) growth confined by a solid member other than seed or product (e.g., bridgman-stockbarger method) (83) having bottom-up crystallization (e.g., vfg, vgf)
117/84117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(84) forming from vapor or gaseous state (e.g., vpe, sublimation)
117/85117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(84) forming from vapor or gaseous state (e.g., vpe, sublimation) (85) with a step of measuring, testing, or sensing
117/86117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(84) forming from vapor or gaseous state (e.g., vpe, sublimation) (85) with a step of measuring, testing, or sensing (86) with responsive control
117/87117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(84) forming from vapor or gaseous state (e.g., vpe, sublimation) (87) forming a platelet shape or a small diameter, elongate, generally cylindrical shape (e.g., whisker, fiber, needle, filament)
117/88117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(84) forming from vapor or gaseous state (e.g., vpe, sublimation) (88) with decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., cvd)
117/89117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(84) forming from vapor or gaseous state (e.g., vpe, sublimation) (88) with decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., cvd) (89) including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing)
117/90117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(84) forming from vapor or gaseous state (e.g., vpe, sublimation) (88) with decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., cvd) (89) including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing) (90) with pretreatment of substrate (e.g., coacting ablating)
117/91117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(84) forming from vapor or gaseous state (e.g., vpe, sublimation) (88) with decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., cvd) (89) including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing) (91) with a chemical reaction (except ionization) in a disparate zone to form a precursor
117/92117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(84) forming from vapor or gaseous state (e.g., vpe, sublimation) (88) with decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., cvd) (89) including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing) (92) using an energy beam or field, a particle beam or field, or a plasma (e.g., ionization, pecvd, cbe, mombe, rf induction, laser)
117/93117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(84) forming from vapor or gaseous state (e.g., vpe, sublimation) (88) with decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., cvd) (89) including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing) (93) with significant flow manipulation or condition, other than merely specifying the components or their sequence or both
117/94117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(84) forming from vapor or gaseous state (e.g., vpe, sublimation) (88) with decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., cvd) (94) with pretreatment or preparation of a base (e.g., annealing)
117/95117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(84) forming from vapor or gaseous state (e.g., vpe, sublimation) (88) with decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., cvd) (94) with pretreatment or preparation of a base (e.g., annealing) (95) coating (e.g., masking, implanting)
117/96117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(84) forming from vapor or gaseous state (e.g., vpe, sublimation) (88) with decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., cvd) (94) with pretreatment or preparation of a base (e.g., annealing) (95) coating (e.g., masking, implanting) (96) for autodoping control
117/97117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(84) forming from vapor or gaseous state (e.g., vpe, sublimation) (88) with decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., cvd) (94) with pretreatment or preparation of a base (e.g., annealing) (97) material removal (e.g., etching, cleaning, polishing)
117/98117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(84) forming from vapor or gaseous state (e.g., vpe, sublimation) (88) with decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., cvd) (98) with a movement of substrate or vapor or gas supply means during growth (e.g., substrate rotation)
117/99117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(84) forming from vapor or gaseous state (e.g., vpe, sublimation) (88) with decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., cvd) (99) with a chemical reaction (except ionization) in a disparate zone to form a precursor (e.g., transport processes)
117/100117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(84) forming from vapor or gaseous state (e.g., vpe, sublimation) (88) with decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., cvd) (99) with a chemical reaction (except ionization) in a disparate zone to form a precursor (e.g., transport processes) (100) fully-sealed or vacuum-maintained chamber (e.g., ampoule)
117/101117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(84) forming from vapor or gaseous state (e.g., vpe, sublimation) (88) with decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., cvd) (101) characterized by specified crystallography or arrangement of substrate (e.g., wafer cassette, miller index)
117/102117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(84) forming from vapor or gaseous state (e.g., vpe, sublimation) (88) with decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., cvd) (102) with significant flow manipulation or condition, other than merely specifying the components or their sequence or both
117/103117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(84) forming from vapor or gaseous state (e.g., vpe, sublimation) (88) with decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., cvd) (103) using an energy beam or field, a particle beam or field, or a plasma (e.g., ionization, pecvd, cbe, mombe, rf induction, laser)
117/104117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(84) forming from vapor or gaseous state (e.g., vpe, sublimation) (88) with decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., cvd) (104) using an organic precursor (e.g., propane, metal-organic, mocvd, movpe)
117/105117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(84) forming from vapor or gaseous state (e.g., vpe, sublimation) (105) including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing)
117/106117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(84) forming from vapor or gaseous state (e.g., vpe, sublimation) (106) with pretreatment or preparation of a base (e.g., annealing)
117/107117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(84) forming from vapor or gaseous state (e.g., vpe, sublimation) (107) with movement of substrate or vapor or gas supply means during growth
117/108117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(84) forming from vapor or gaseous state (e.g., vpe, sublimation) (108) using an energy beam or field, a particle beam or field, or a plasma (e.g., mbe)
117/109117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(84) forming from vapor or gaseous state (e.g., vpe, sublimation) (109) fully-sealed or vacuum-maintained chamber (e.g., ampoule)
117/200117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(200) apparatus
117/201117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(200) apparatus (201) with means for measuring, testing, or sensing
117/202117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(200) apparatus (201) with means for measuring, testing, or sensing (202) with responsive control means
117/203117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(200) apparatus (201) with means for measuring, testing, or sensing (203) with a window or port for visual observation or examination
117/204117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(200) apparatus (204) with means for treating single-crystal (e.g., heat treating)
117/205117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(200) apparatus (205) for forming a platelet shape or a small diameter, elongate, generally cylindrical shape (e.g., whisker, fiber, needle, filament)
117/206117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(200) apparatus (206) for crystallization from liquid or supercritical state
117/207117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(200) apparatus (206) for crystallization from liquid or supercritical state (207) crucibleless apparatus having means providing movement of discrete droplets or solid particles to thin-film precursor (e.g., verneuil method)
117/208117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(200) apparatus (206) for crystallization from liquid or supercritical state (208) seed pulling
117/209117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(200) apparatus (206) for crystallization from liquid or supercritical state (208) seed pulling (209) including solid member shaping means other than seed or product (e.g., edfg die)
117/210117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(200) apparatus (206) for crystallization from liquid or supercritical state (208) seed pulling (209) including solid member shaping means other than seed or product (e.g., edfg die) (210) means for forming a hollow structure (e.g., tube, polygon)
117/211117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(200) apparatus (206) for crystallization from liquid or supercritical state (208) seed pulling (209) including solid member shaping means other than seed or product (e.g., edfg die) (211) including means forming a flat shape (e.g., ribbon)
117/212117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(200) apparatus (206) for crystallization from liquid or supercritical state (208) seed pulling (209) including solid member shaping means other than seed or product (e.g., edfg die) (211) including means forming a flat shape (e.g., ribbon) (212) pulling includes a horizontal component
117/213117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(200) apparatus (206) for crystallization from liquid or supercritical state (208) seed pulling (213) including a sectioned crucible (e.g., double crucible, baffle)
117/214117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(200) apparatus (206) for crystallization from liquid or supercritical state (208) seed pulling (214) including details of precursor replenishment
117/215117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(200) apparatus (206) for crystallization from liquid or supercritical state (208) seed pulling (215) including sealing means details
117/216117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(200) apparatus (206) for crystallization from liquid or supercritical state (208) seed pulling (216) including a fully-sealed or vacuum-maintained crystallization chamber (e.g., ampoule)
117/217117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(200) apparatus (206) for crystallization from liquid or supercritical state (208) seed pulling (217) including heating or cooling details (e.g., shield configuration)
117/218117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(200) apparatus (206) for crystallization from liquid or supercritical state (208) seed pulling (218) including details of means providing product movement (e.g., shaft guides, servo means)
117/219117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(200) apparatus (206) for crystallization from liquid or supercritical state (219) having means for producing a moving solid-liquid-solid zone
117/220117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(200) apparatus (206) for crystallization from liquid or supercritical state (219) having means for producing a moving solid-liquid-solid zone (220) includin a solid member other than seed or product contacting the liquid (e.g., crucible, immersed heating element)
117/221117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(200) apparatus (206) for crystallization from liquid or supercritical state (219) having means for producing a moving solid-liquid-solid zone (221) havind details of a stabilizing feature
117/222117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(200) apparatus (206) for crystallization from liquid or supercritical state (219) having means for producing a moving solid-liquid-solid zone (222) including heating or cooling details
117/223117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(200) apparatus (206) for crystallization from liquid or supercritical state (223) shape defined by a solid member other than seed or product (e.g., bridgman-stockbarger)
117/224117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(200) apparatus (206) for crystallization from liquid or supercritical state (224) including pressurized crystallization means (e.g., hydrothermal)
117/900117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(900) apparatus characterized by composition or treatment thereof (e.g., surface finish, surface coating)
117/901117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(901) levitation, reduced gravity, microgravity, space
117/902117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(902) specified orientation, shape, crystallography, or size of seed or substrate
117/903117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(903) dendrite or web or cage technique
117/904117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(904) laser beam
117/905117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(905) electron beam
117/906117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(906) special atmosphere other than vacuum or inert
117/907117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(906) special atmosphere other than vacuum or inert (907) refluxing atmosphere
117/910117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(910) downward pulling
117/911117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(911) seed or rod holders
117/912117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(912) replenishing liquid precursor, other than a moving zone
117/913117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(913) graphoepitaxy or surface modification to enhance epitaxy
117/914117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(914) crystallization on a continuous moving substrate or cooling surface (e.g., wheel, cylinder, belt)
117/915117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(915) separating from substrate
117/916117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(916) oxygen testing
117/917117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(917) magnetic
117/918117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(918) single-crystal waveguide
117/919117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(918) single-crystal waveguide (919) organic
117/920117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(920) single-crystals having a hollow (e.g., tube, concavo-convex) {c30b 29/66}
117/921117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(921) small diameter, elongate, generally cylindrical single-crystal (e.g., whiskers, needles, filaments, fibers, wires) {c30b 29/62}
117/922117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(922) free-standing, flat single-crystal (e.g., platelet, plate, strip, disk, tape, sheet, ribbon) {c30b 29/64}
117/923117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(923) single-crystal of complex geometry (e.g., patterned, elo) {c30b 29/66}
117/924117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(924) homogeneous composition product with enlarged crystals or oriented-crystals (e.g., columnar)
117/925117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(925) organic compound containing single-crystal {c30b 29/54}
117/926117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(925) organic compound containing single-crystal {c30b 29/54} (926) tartrate containing (e.g., rochelle salt) {c30b 29/56}
117/927117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(925) organic compound containing single-crystal {c30b 29/54} (927) macromolecular compound containing (i.e., more than about 100 atoms) {c30b 29/58}
117/928117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(928) single-crystal of pure or intentionally doped element {c30b 29/02}
117/929117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(928) single-crystal of pure or intentionally doped element {c30b 29/02} (929) carbon (e.g., diamond) {c30b 29/04}
117/930117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(928) single-crystal of pure or intentionally doped element {c30b 29/02} (930) silicon from solid or gel state {c30b 29/06}
117/931117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(928) single-crystal of pure or intentionally doped element {c30b 29/02} (931) silicon from liquid or supercritical state {c30b 29/06}
117/932117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(928) single-crystal of pure or intentionally doped element {c30b 29/02} (931) silicon from liquid or supercritical state {c30b 29/06} (932) by pulling {c30b 29/06}
117/933117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(928) single-crystal of pure or intentionally doped element {c30b 29/02} (931) silicon from liquid or supercritical state {c30b 29/06} (933) by moving zone (not verneuil) {c30b 29/06}
117/934117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(928) single-crystal of pure or intentionally doped element {c30b 29/02} (931) silicon from liquid or supercritical state {c30b 29/06} (934) by liquid phase epitaxy {c30b 29/06}
117/935117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(928) single-crystal of pure or intentionally doped element {c30b 29/02} (935) silicon from vapor or gaseous state {c30b 29/06}
117/936117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(928) single-crystal of pure or intentionally doped element {c30b 29/02} (936) germanium {c30b 29/08}
117/937117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(937) inorganic containing single-crystal (e.g., compound, mixture, composite) {c30b 29/10}
117/938117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(937) inorganic containing single-crystal (e.g., compound, mixture, composite) {c30b 29/10} (938) gold, silver, or platinum containing {c30b 29/52}
117/939117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(937) inorganic containing single-crystal (e.g., compound, mixture, composite) {c30b 29/10} (939) free metal or intermetallic compound or silicon-metal compound based, except arsenic (e.g., alloys, sige, insb) {c30b 29/40, 29/52}
117/940117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(937) inorganic containing single-crystal (e.g., compound, mixture, composite) {c30b 29/10} (940) halide containing (e.g., fluorphlogopite, fluor-mica) {c30b 29/12}
117/941117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(937) inorganic containing single-crystal (e.g., compound, mixture, composite) {c30b 29/10} (941) phosphorus-oxygen bond containing (e.g., phosphate (po4)) {c30b 29/14}
117/942117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(937) inorganic containing single-crystal (e.g., compound, mixture, composite) {c30b 29/10} (942) silicon-oxygen bond containing (e.g., emerald, beryl, garnet, mica) {c30b 29/16}
117/943117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(937) inorganic containing single-crystal (e.g., compound, mixture, composite) {c30b 29/10} (942) silicon-oxygen bond containing (e.g., emerald, beryl, garnet, mica) {c30b 29/16} (943) quartz (sio2) {c30b 29/18}
117/944117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(937) inorganic containing single-crystal (e.g., compound, mixture, composite) {c30b 29/10} (944) oxygen compound containing (e.g., yttria stabilized zirconia) {c30b 29/16}
117/945117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(937) inorganic containing single-crystal (e.g., compound, mixture, composite) {c30b 29/10} (944) oxygen compound containing (e.g., yttria stabilized zirconia) {c30b 29/16} (945) containing a3me5o12 (1.5(a2o3):2.5(me2o3)), wherein a is trivalent and selected from the group sc, y, la, hf, or a rare earth metal and me is trivalent and selected from the group fe, ga, sc, cr, co, or al (e.g., non-silicate garnets) {c30b 29/28}
117/946117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(937) inorganic containing single-crystal (e.g., compound, mixture, composite) {c30b 29/10} (944) oxygen compound containing (e.g., yttria stabilized zirconia) {c30b 29/16} (946) containing ame2o4 (ao:(me2o3)), wherein a is divalent and selected from the group mg, ni, co, mn, zn, or cd and me is trivalent and selected from the group fe, ga, sc, cr, co, or al (e.g., spinels) {c30b 29/26}
117/947117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(937) inorganic containing single-crystal (e.g., compound, mixture, composite) {c30b 29/10} (944) oxygen compound containing (e.g., yttria stabilized zirconia) {c30b 29/16} (947) containg ameo3 ((a2o3):(me2o3)), wherein a is trivalent and selected from the group sc, y, la, hf, or a rare earth metal and me is trivalent and selected from the group fe, ga, sc, cr, co, or al (e.g., perovskite structure, ortho-ferrites) {c30b29/24}
117/948117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(937) inorganic containing single-crystal (e.g., compound, mixture, composite) {c30b 29/10} (944) oxygen compound containing (e.g., yttria stabilized zirconia) {c30b 29/16} (948) niobate, vanadate, or tantalate containing {c30b 29/30}
117/949117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(937) inorganic containing single-crystal (e.g., compound, mixture, composite) {c30b 29/10} (944) oxygen compound containing (e.g., yttria stabilized zirconia) {c30b 29/16} (949) titanate, germanate, molybdate, or tungstate containing {c30b 29/32}
117/950117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(937) inorganic containing single-crystal (e.g., compound, mixture, composite) {c30b 29/10} (944) oxygen compound containing (e.g., yttria stabilized zirconia) {c30b 29/16} (950) aluminum containing (e.g., al2o3, ruby, corundum, sapphire, chrysoberyl) {c30b 29/20}
117/951117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(937) inorganic containing single-crystal (e.g., compound, mixture, composite) {c30b 29/10} (951) carbide containing (e.g., sic) {c30b 29/36}
117/952117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(937) inorganic containing single-crystal (e.g., compound, mixture, composite) {c30b 29/10} (952) nitride containing (e.g., gan, cbn) {c30b 29/38}
117/953117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(937) inorganic containing single-crystal (e.g., compound, mixture, composite) {c30b 29/10} (953) {b,al,ga,in,tl}{p,as,sb,bi} compound containing, except intermetallics thereof (i.e., except {al,ga,in,tl}{sb,bi}) {c30b 29/40}
117/954117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(937) inorganic containing single-crystal (e.g., compound, mixture, composite) {c30b 29/10} (953) {b,al,ga,in,tl}{p,as,sb,bi} compound containing, except intermetallics thereof (i.e., except {al,ga,in,tl}{sb,bi}) {c30b 29/40} (954) gallium arsenide containing (e.g., gaalas, gaas) {c30b 29/42}
117/955117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(937) inorganic containing single-crystal (e.g., compound, mixture, composite) {c30b 29/10} (953) {b,al,ga,in,tl}{p,as,sb,bi} compound containing, except intermetallics thereof (i.e., except {al,ga,in,tl}{sb,bi}) {c30b 29/40} (955) gallium phosphide containing {c30b 29/44}
117/956117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(937) inorganic containing single-crystal (e.g., compound, mixture, composite) {c30b 29/10} (956) {zn,cd,hg}{s,se,te} compound containing {c30b 29/46}
117/957117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(937) inorganic containing single-crystal (e.g., compound, mixture, composite) {c30b 29/10} (956) {zn,cd,hg}{s,se,te} compound containing {c30b 29/46} (957) cdhgte containing {c30b 29/48}
117/958117 single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor/(937) inorganic containing single-crystal (e.g., compound, mixture, composite) {c30b 29/10} (956) {zn,cd,hg}{s,se,te} compound containing {c30b 29/46} (958) cadmium sulfide containing (e.g., zncds) {c30b 29/50}

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