USPC Patent Classifications

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Class 257 active solid-state devices (e.g., transistors, solid-state diodes)
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257/1257 active solid-state devices (e.g., transistors, solid-state diodes)/(1) bulk effect device
257/2257 active solid-state devices (e.g., transistors, solid-state diodes)/(1) bulk effect device (2) bulk effect switching in amorphous material
257/3257 active solid-state devices (e.g., transistors, solid-state diodes)/(1) bulk effect device (2) bulk effect switching in amorphous material (3) with means to localize region of conduction (e.g., "pore" structure)
257/4257 active solid-state devices (e.g., transistors, solid-state diodes)/(1) bulk effect device (2) bulk effect switching in amorphous material (4) with specified electrode composition or configuration
257/5257 active solid-state devices (e.g., transistors, solid-state diodes)/(1) bulk effect device (2) bulk effect switching in amorphous material (5) in array
257/6257 active solid-state devices (e.g., transistors, solid-state diodes)/(1) bulk effect device (6) intervalley transfer (e.g., gunn effect)
257/7257 active solid-state devices (e.g., transistors, solid-state diodes)/(1) bulk effect device (6) intervalley transfer (e.g., gunn effect) (7) in monolithic integrated circuit
257/8257 active solid-state devices (e.g., transistors, solid-state diodes)/(1) bulk effect device (6) intervalley transfer (e.g., gunn effect) (8) three or more terminal device
257/9257 active solid-state devices (e.g., transistors, solid-state diodes)/(9) thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device)
257/10257 active solid-state devices (e.g., transistors, solid-state diodes)/(9) thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) (10) low workfunction layer for electron emission (e.g., photocathode electron emissive layer)
257/11257 active solid-state devices (e.g., transistors, solid-state diodes)/(9) thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) (10) low workfunction layer for electron emission (e.g., photocathode electron emissive layer) (11) combined with a heterojunction involving a iii-v compound
257/12257 active solid-state devices (e.g., transistors, solid-state diodes)/(9) thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) (12) heterojunction
257/13257 active solid-state devices (e.g., transistors, solid-state diodes)/(9) thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) (12) heterojunction (13) incoherent light emitter
257/14257 active solid-state devices (e.g., transistors, solid-state diodes)/(9) thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) (12) heterojunction (14) quantum well
257/15257 active solid-state devices (e.g., transistors, solid-state diodes)/(9) thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) (12) heterojunction (14) quantum well (15) superlattice
257/16257 active solid-state devices (e.g., transistors, solid-state diodes)/(9) thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) (12) heterojunction (14) quantum well (15) superlattice (16) of amorphous semiconductor material
257/17257 active solid-state devices (e.g., transistors, solid-state diodes)/(9) thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) (12) heterojunction (14) quantum well (15) superlattice (17) with particular barrier dimension
257/18257 active solid-state devices (e.g., transistors, solid-state diodes)/(9) thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) (12) heterojunction (14) quantum well (15) superlattice (18) strained layer superlattice
257/19257 active solid-state devices (e.g., transistors, solid-state diodes)/(9) thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) (12) heterojunction (14) quantum well (15) superlattice (18) strained layer superlattice (19) si x ge 1-x
257/20257 active solid-state devices (e.g., transistors, solid-state diodes)/(9) thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) (12) heterojunction (14) quantum well (15) superlattice (20) field effect device
257/21257 active solid-state devices (e.g., transistors, solid-state diodes)/(9) thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) (12) heterojunction (14) quantum well (15) superlattice (21) light responsive structure
257/22257 active solid-state devices (e.g., transistors, solid-state diodes)/(9) thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) (12) heterojunction (14) quantum well (15) superlattice (22) with specified semiconductor materials
257/23257 active solid-state devices (e.g., transistors, solid-state diodes)/(9) thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) (12) heterojunction (14) quantum well (23) current flow across well
257/24257 active solid-state devices (e.g., transistors, solid-state diodes)/(9) thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) (12) heterojunction (14) quantum well (24) field effect device
257/25257 active solid-state devices (e.g., transistors, solid-state diodes)/(9) thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) (12) heterojunction (14) quantum well (25) employing resonant tunneling
257/26257 active solid-state devices (e.g., transistors, solid-state diodes)/(9) thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) (12) heterojunction (26) ballistic transport device
257/27257 active solid-state devices (e.g., transistors, solid-state diodes)/(9) thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) (12) heterojunction (26) ballistic transport device (27) field effect transistor
257/28257 active solid-state devices (e.g., transistors, solid-state diodes)/(9) thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) (28) non-heterojunction superlattice (e.g., doping superlattice or alternating metal and insulator layers)
257/29257 active solid-state devices (e.g., transistors, solid-state diodes)/(9) thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) (29) ballistic transport device (e.g., hot electron transistor)
257/30257 active solid-state devices (e.g., transistors, solid-state diodes)/(9) thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) (30) tunneling through region of reduced conductivity
257/31257 active solid-state devices (e.g., transistors, solid-state diodes)/(9) thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) (30) tunneling through region of reduced conductivity (31) josephson
257/32257 active solid-state devices (e.g., transistors, solid-state diodes)/(9) thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) (30) tunneling through region of reduced conductivity (31) josephson (32) particular electrode material
257/33257 active solid-state devices (e.g., transistors, solid-state diodes)/(9) thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) (30) tunneling through region of reduced conductivity (31) josephson (32) particular electrode material (33) high temperature (i.e., >30o kelvin)
257/34257 active solid-state devices (e.g., transistors, solid-state diodes)/(9) thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) (30) tunneling through region of reduced conductivity (31) josephson (34) weak link (e.g., narrowed portion of superconductive line)
257/35257 active solid-state devices (e.g., transistors, solid-state diodes)/(9) thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) (30) tunneling through region of reduced conductivity (31) josephson (35) particular barrier material
257/36257 active solid-state devices (e.g., transistors, solid-state diodes)/(9) thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) (30) tunneling through region of reduced conductivity (31) josephson (36) with additional electrode to control conductive state of josephson junction
257/37257 active solid-state devices (e.g., transistors, solid-state diodes)/(9) thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) (30) tunneling through region of reduced conductivity (37) at least one electrode layer of semiconductor material
257/38257 active solid-state devices (e.g., transistors, solid-state diodes)/(9) thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) (30) tunneling through region of reduced conductivity (37) at least one electrode layer of semiconductor material (38) three or more electrode device
257/39257 active solid-state devices (e.g., transistors, solid-state diodes)/(9) thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) (30) tunneling through region of reduced conductivity (39) three or more electrode device
257/40257 active solid-state devices (e.g., transistors, solid-state diodes)/(40) organic semiconductor material
257/41257 active solid-state devices (e.g., transistors, solid-state diodes)/(41) point contact device
257/42257 active solid-state devices (e.g., transistors, solid-state diodes)/(42) semiconductor is selenium or tellurium in elemental form
257/43257 active solid-state devices (e.g., transistors, solid-state diodes)/(43) semiconductor is an oxide of a metal (e.g., cuo, zno) or copper sulfide
257/44257 active solid-state devices (e.g., transistors, solid-state diodes)/(44) with metal contact alloyed to elemental semiconductor type pn junction in nonregenerative structure
257/45257 active solid-state devices (e.g., transistors, solid-state diodes)/(44) with metal contact alloyed to elemental semiconductor type pn junction in nonregenerative structure (45) elongated alloyed region (e.g., thermal gradient zone melting, tgzm)
257/46257 active solid-state devices (e.g., transistors, solid-state diodes)/(44) with metal contact alloyed to elemental semiconductor type pn junction in nonregenerative structure (46) in pn junction tunnel diode (esaki diode)
257/47257 active solid-state devices (e.g., transistors, solid-state diodes)/(44) with metal contact alloyed to elemental semiconductor type pn junction in nonregenerative structure (47) in bipolar transistor structure
257/48257 active solid-state devices (e.g., transistors, solid-state diodes)/(48) test or calibration structure
257/49257 active solid-state devices (e.g., transistors, solid-state diodes)/(49) non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction)
257/50257 active solid-state devices (e.g., transistors, solid-state diodes)/(49) non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) (50) non-single crystal, or recrystallized, active junction adapted to be electrically shorted (e.g., "anti-fuse" element)
257/51257 active solid-state devices (e.g., transistors, solid-state diodes)/(49) non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) (51) non-single crystal, or recrystallized, material forms active junction with single crystal material (e.g., monocrystal to polycrystal pn junction or heterojunction)
257/52257 active solid-state devices (e.g., transistors, solid-state diodes)/(49) non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) (52) amorphous semiconductor material
257/53257 active solid-state devices (e.g., transistors, solid-state diodes)/(49) non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) (52) amorphous semiconductor material (53) responsive to nonelectrical external signals (e.g., light)
257/54257 active solid-state devices (e.g., transistors, solid-state diodes)/(49) non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) (52) amorphous semiconductor material (53) responsive to nonelectrical external signals (e.g., light) (54) with schottky barrier to amorphous material
257/55257 active solid-state devices (e.g., transistors, solid-state diodes)/(49) non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) (52) amorphous semiconductor material (53) responsive to nonelectrical external signals (e.g., light) (55) amorphous semiconductor is alloy or contains material to change band gap (e.g., si x ge 1-x , sin y )
257/56257 active solid-state devices (e.g., transistors, solid-state diodes)/(49) non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) (52) amorphous semiconductor material (53) responsive to nonelectrical external signals (e.g., light) (56) with impurity other than hydrogen to passivate dangling bonds (e.g., halide)
257/57257 active solid-state devices (e.g., transistors, solid-state diodes)/(49) non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) (52) amorphous semiconductor material (57) field effect device in amorphous semiconductor material
257/58257 active solid-state devices (e.g., transistors, solid-state diodes)/(49) non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) (52) amorphous semiconductor material (57) field effect device in amorphous semiconductor material (58) with impurity other than hydrogen to passivate dangling bonds (e.g., halide)
257/59257 active solid-state devices (e.g., transistors, solid-state diodes)/(49) non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) (52) amorphous semiconductor material (57) field effect device in amorphous semiconductor material (59) in array having structure for use as imager or display, or with transparent electrode
257/60257 active solid-state devices (e.g., transistors, solid-state diodes)/(49) non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) (52) amorphous semiconductor material (57) field effect device in amorphous semiconductor material (60) with field electrode under or on a side edge of amorphous semiconductor material (e.g., vertical current path)
257/61257 active solid-state devices (e.g., transistors, solid-state diodes)/(49) non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) (52) amorphous semiconductor material (57) field effect device in amorphous semiconductor material (61) with heavily doped regions contacting amorphous semiconductor material (e.g., heavily doped source and drain)
257/62257 active solid-state devices (e.g., transistors, solid-state diodes)/(49) non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) (52) amorphous semiconductor material (62) with impurity other than hydrogen to passivate dangling bonds (e.g., halide)
257/63257 active solid-state devices (e.g., transistors, solid-state diodes)/(49) non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) (52) amorphous semiconductor material (63) amorphous semiconductor is alloy or contains material to change band gap (e.g., si x ge 1-x , sin y )
257/64257 active solid-state devices (e.g., transistors, solid-state diodes)/(49) non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) (64) non-single crystal, or recrystallized, material with specified crystal structure (e.g., specified crystal size or orientation)
257/65257 active solid-state devices (e.g., transistors, solid-state diodes)/(49) non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) (65) non-single crystal, or recrystallized, material containing non-dopant additive, or alloy of semiconductor materials (e.g., ge x si 1- x, polycrystalline silicon with dangling bond modifier)
257/66257 active solid-state devices (e.g., transistors, solid-state diodes)/(49) non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) (66) field effect device in non-single crystal, or recrystallized, semiconductor material
257/67257 active solid-state devices (e.g., transistors, solid-state diodes)/(49) non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) (66) field effect device in non-single crystal, or recrystallized, semiconductor material (67) in combination with device formed in single crystal semiconductor material (e.g., stacked fets)
257/68257 active solid-state devices (e.g., transistors, solid-state diodes)/(49) non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) (66) field effect device in non-single crystal, or recrystallized, semiconductor material (67) in combination with device formed in single crystal semiconductor material (e.g., stacked fets) (68) capacitor element in single crystal semiconductor (e.g., dram)
257/69257 active solid-state devices (e.g., transistors, solid-state diodes)/(49) non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) (66) field effect device in non-single crystal, or recrystallized, semiconductor material (67) in combination with device formed in single crystal semiconductor material (e.g., stacked fets) (69) field effect transistor in single crystal material, complementary to that in non-single crystal, or recrystallized, material (e.g., cmos)
257/70257 active solid-state devices (e.g., transistors, solid-state diodes)/(49) non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) (66) field effect device in non-single crystal, or recrystallized, semiconductor material (67) in combination with device formed in single crystal semiconductor material (e.g., stacked fets) (70) recrystallized semiconductor material
257/71257 active solid-state devices (e.g., transistors, solid-state diodes)/(49) non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) (66) field effect device in non-single crystal, or recrystallized, semiconductor material (71) in combination with capacitor element (e.g., dram)
257/72257 active solid-state devices (e.g., transistors, solid-state diodes)/(49) non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) (66) field effect device in non-single crystal, or recrystallized, semiconductor material (72) in array having structure for use as imager or display, or with transparent electrode
257/73257 active solid-state devices (e.g., transistors, solid-state diodes)/(49) non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) (73) schottky barrier to polycrystalline semiconductor material
257/74257 active solid-state devices (e.g., transistors, solid-state diodes)/(49) non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) (74) plural recrystallized semiconductor layers (e.g., "3-dimensional integrated circuit")
257/75257 active solid-state devices (e.g., transistors, solid-state diodes)/(49) non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) (75) recrystallized semiconductor material
257/76257 active solid-state devices (e.g., transistors, solid-state diodes)/(76) specified wide band gap (1.5ev) semiconductor material other than gaasp or gaalas
257/77257 active solid-state devices (e.g., transistors, solid-state diodes)/(76) specified wide band gap (1.5ev) semiconductor material other than gaasp or gaalas (77) diamond or silicon carbide
257/78257 active solid-state devices (e.g., transistors, solid-state diodes)/(76) specified wide band gap (1.5ev) semiconductor material other than gaasp or gaalas (78) ii-vi compound
257/79257 active solid-state devices (e.g., transistors, solid-state diodes)/(79) incoherent light emitter structure
257/80257 active solid-state devices (e.g., transistors, solid-state diodes)/(79) incoherent light emitter structure (80) in combination with or also constituting light responsive device
257/81257 active solid-state devices (e.g., transistors, solid-state diodes)/(79) incoherent light emitter structure (80) in combination with or also constituting light responsive device (81) with specific housing or contact structure
257/82257 active solid-state devices (e.g., transistors, solid-state diodes)/(79) incoherent light emitter structure (80) in combination with or also constituting light responsive device (81) with specific housing or contact structure (82) discrete light emitting and light responsive devices
257/83257 active solid-state devices (e.g., transistors, solid-state diodes)/(79) incoherent light emitter structure (80) in combination with or also constituting light responsive device (83) light coupled transistor structure
257/84257 active solid-state devices (e.g., transistors, solid-state diodes)/(79) incoherent light emitter structure (80) in combination with or also constituting light responsive device (84) combined in integrated structure
257/85257 active solid-state devices (e.g., transistors, solid-state diodes)/(79) incoherent light emitter structure (80) in combination with or also constituting light responsive device (84) combined in integrated structure (85) with heterojunction
257/86257 active solid-state devices (e.g., transistors, solid-state diodes)/(79) incoherent light emitter structure (86) active layer of indirect band gap semiconductor
257/87257 active solid-state devices (e.g., transistors, solid-state diodes)/(79) incoherent light emitter structure (86) active layer of indirect band gap semiconductor (87) with means to facilitate electron-hole recombination (e.g., isoelectronic traps such as nitrogen in gap)
257/88257 active solid-state devices (e.g., transistors, solid-state diodes)/(79) incoherent light emitter structure (88) plural light emitting devices (e.g., matrix, 7-segment array)
257/89257 active solid-state devices (e.g., transistors, solid-state diodes)/(79) incoherent light emitter structure (88) plural light emitting devices (e.g., matrix, 7-segment array) (89) multi-color emission
257/90257 active solid-state devices (e.g., transistors, solid-state diodes)/(79) incoherent light emitter structure (88) plural light emitting devices (e.g., matrix, 7-segment array) (89) multi-color emission (90) with heterojunction
257/91257 active solid-state devices (e.g., transistors, solid-state diodes)/(79) incoherent light emitter structure (88) plural light emitting devices (e.g., matrix, 7-segment array) (91) with shaped contacts or opaque masking
257/92257 active solid-state devices (e.g., transistors, solid-state diodes)/(79) incoherent light emitter structure (88) plural light emitting devices (e.g., matrix, 7-segment array) (92) alphanumeric segmented array
257/93257 active solid-state devices (e.g., transistors, solid-state diodes)/(79) incoherent light emitter structure (88) plural light emitting devices (e.g., matrix, 7-segment array) (93) with electrical isolation means in integrated circuit structure
257/94257 active solid-state devices (e.g., transistors, solid-state diodes)/(79) incoherent light emitter structure (94) with heterojunction
257/95257 active solid-state devices (e.g., transistors, solid-state diodes)/(79) incoherent light emitter structure (94) with heterojunction (95) with contoured external surface (e.g., dome shape to facilitate light emission)
257/96257 active solid-state devices (e.g., transistors, solid-state diodes)/(79) incoherent light emitter structure (94) with heterojunction (96) plural heterojunctions in same device
257/97257 active solid-state devices (e.g., transistors, solid-state diodes)/(79) incoherent light emitter structure (94) with heterojunction (96) plural heterojunctions in same device (97) more than two heterojunctions in same device
257/98257 active solid-state devices (e.g., transistors, solid-state diodes)/(79) incoherent light emitter structure (98) with reflector, opaque mask, or optical element (e.g., lens, optical fiber, index of refraction matching layer, luminescent material layer, filter) integral with device or device enclosure or package
257/99257 active solid-state devices (e.g., transistors, solid-state diodes)/(79) incoherent light emitter structure (99) with housing or contact structure
257/100257 active solid-state devices (e.g., transistors, solid-state diodes)/(79) incoherent light emitter structure (100) encapsulated
257/101257 active solid-state devices (e.g., transistors, solid-state diodes)/(79) incoherent light emitter structure (101) with particular dopant concentration or concentration profile (e.g., graded junction)
257/102257 active solid-state devices (e.g., transistors, solid-state diodes)/(79) incoherent light emitter structure (102) with particular dopant material (e.g., zinc as dopant in gaas)
257/103257 active solid-state devices (e.g., transistors, solid-state diodes)/(79) incoherent light emitter structure (103) with particular semiconductor material
257/104257 active solid-state devices (e.g., transistors, solid-state diodes)/(104) tunneling pn junction (e.g., esaki diode) device
257/105257 active solid-state devices (e.g., transistors, solid-state diodes)/(104) tunneling pn junction (e.g., esaki diode) device (105) in three or more terminal device
257/106257 active solid-state devices (e.g., transistors, solid-state diodes)/(104) tunneling pn junction (e.g., esaki diode) device (106) reverse bias tunneling structure (e.g., "backward" diode, true zener diode)
257/107257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor)
257/108257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (108) controlled by nonelectrical, nonoptical external signal (e.g., magnetic field, pressure, thermal)
257/109257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (109) having only two terminals and no control electrode (gate), e.g., shockley diode
257/110257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (109) having only two terminals and no control electrode (gate), e.g., shockley diode (110) more than four semiconductor layers of alternating conductivity types (e.g., pnpnpn structure, 5 layer bidirectional diacs, etc.)
257/111257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (109) having only two terminals and no control electrode (gate), e.g., shockley diode (111) triggered by v bo overvoltage means
257/112257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (109) having only two terminals and no control electrode (gate), e.g., shockley diode (112) with highly-doped breakdown diode trigger
257/113257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (113) with light activation
257/114257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (113) with light activation (114) with separate light detector integrated on chip with regenerative switching device
257/115257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (113) with light activation (115) with electrical trigger signal amplification means (e.g., amplified gate, "pilot thyristor", etc.)
257/116257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (113) with light activation (116) with light conductor means (e.g., light fiber or light pipe) integral with device or device enclosure or package
257/117257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (113) with light activation (116) with light conductor means (e.g., light fiber or light pipe) integral with device or device enclosure or package (117) in groove or with thinned semiconductor portion
257/118257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (113) with light activation (118) with groove or thinned light sensitive portion
257/119257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (119) bidirectional rectifier with control electrode (gate) (e.g., triac)
257/120257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (119) bidirectional rectifier with control electrode (gate) (e.g., triac) (120) six or more semiconductor layers of alternating conductivity types (e.g., npnpnpn structure)
257/121257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (119) bidirectional rectifier with control electrode (gate) (e.g., triac) (121) with diode or transistor in reverse path
257/122257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (119) bidirectional rectifier with control electrode (gate) (e.g., triac) (122) lateral
257/123257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (119) bidirectional rectifier with control electrode (gate) (e.g., triac) (123) with trigger signal amplification (e.g., amplified gate)
257/124257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (119) bidirectional rectifier with control electrode (gate) (e.g., triac) (124) combined with field effect transistor structure
257/125257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (119) bidirectional rectifier with control electrode (gate) (e.g., triac) (124) combined with field effect transistor structure (125) controllable emitter shunting
257/126257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (119) bidirectional rectifier with control electrode (gate) (e.g., triac) (126) with means to separate a device into sections having different conductive polarity
257/127257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (119) bidirectional rectifier with control electrode (gate) (e.g., triac) (126) with means to separate a device into sections having different conductive polarity (127) guard ring or groove
257/128257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (119) bidirectional rectifier with control electrode (gate) (e.g., triac) (128) having overlapping sections of different conductive polarity
257/129257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (119) bidirectional rectifier with control electrode (gate) (e.g., triac) (129) with means to increase reverse breakdown voltage
257/130257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (119) bidirectional rectifier with control electrode (gate) (e.g., triac) (130) switching speed enhancement means
257/131257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (119) bidirectional rectifier with control electrode (gate) (e.g., triac) (130) switching speed enhancement means (131) recombination centers or deep level dopants
257/132257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (132) five or more layer unidirectional structure
257/133257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (133) combined with field effect transistor
257/134257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (133) combined with field effect transistor (134) j-fet (junction field effect transistor)
257/135257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (133) combined with field effect transistor (134) j-fet (junction field effect transistor) (135) vertical (i.e., where the source is located above the drain or vice versa)
257/136257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (133) combined with field effect transistor (134) j-fet (junction field effect transistor) (135) vertical (i.e., where the source is located above the drain or vice versa) (136) enhancement mode (e.g., so-called sits)
257/137257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (133) combined with field effect transistor (137) having controllable emitter shunt
257/138257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (133) combined with field effect transistor (137) having controllable emitter shunt (138) having gate turn off (gto) feature
257/139257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (133) combined with field effect transistor (139) with extended latchup current level (e.g., comfet device)
257/140257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (133) combined with field effect transistor (139) with extended latchup current level (e.g., comfet device) (140) combined with other solid-state active device in integrated structure
257/141257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (133) combined with field effect transistor (139) with extended latchup current level (e.g., comfet device) (141) lateral structure, i.e., current flow parallel to main device surface
257/142257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (133) combined with field effect transistor (139) with extended latchup current level (e.g., comfet device) (142) having impurity doping for gain reduction
257/143257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (133) combined with field effect transistor (139) with extended latchup current level (e.g., comfet device) (143) having anode shunt means
257/144257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (133) combined with field effect transistor (139) with extended latchup current level (e.g., comfet device) (144) cathode emitter or cathode electrode feature
257/145257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (133) combined with field effect transistor (139) with extended latchup current level (e.g., comfet device) (145) low impedance channel contact extends below surface
257/146257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (146) combined with other solid-state active device in integrated structure
257/147257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (147) with extended latchup current level (e.g., gate turn off "gto" device)
257/148257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (147) with extended latchup current level (e.g., gate turn off "gto" device) (148) having impurity doping for gain reduction
257/149257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (147) with extended latchup current level (e.g., gate turn off "gto" device) (149) having anode shunt means
257/150257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (147) with extended latchup current level (e.g., gate turn off "gto" device) (150) with specified housing or external terminal
257/151257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (147) with extended latchup current level (e.g., gate turn off "gto" device) (150) with specified housing or external terminal (151) external gate terminal structure or composition
257/152257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (147) with extended latchup current level (e.g., gate turn off "gto" device) (152) cathode emitter or cathode electrode feature
257/153257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (147) with extended latchup current level (e.g., gate turn off "gto" device) (153) gate region or electrode feature
257/154257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (154) with resistive region connecting separate sections of device
257/155257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (155) with switching speed enhancement means (e.g., schottky contact)
257/156257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (155) with switching speed enhancement means (e.g., schottky contact) (156) having deep level dopants or recombination centers
257/157257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (157) with integrated trigger signal amplification means (e.g., amplified gate, "pilot thyristor", etc.)
257/158257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (157) with integrated trigger signal amplification means (e.g., amplified gate, "pilot thyristor", etc.) (158) three or more amplification stages
257/159257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (157) with integrated trigger signal amplification means (e.g., amplified gate, "pilot thyristor", etc.) (159) transistor as amplifier
257/160257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (157) with integrated trigger signal amplification means (e.g., amplified gate, "pilot thyristor", etc.) (160) with distributed amplified current
257/161257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (157) with integrated trigger signal amplification means (e.g., amplified gate, "pilot thyristor", etc.) (161) with a turn-off diode
257/162257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (162) lateral structure
257/163257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (163) emitter region feature
257/164257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (163) emitter region feature (164) multi-emitter region (e.g., emitter geometry or emitter ballast resistor)
257/165257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (163) emitter region feature (164) multi-emitter region (e.g., emitter geometry or emitter ballast resistor) (165) laterally symmetric regions
257/166257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (163) emitter region feature (164) multi-emitter region (e.g., emitter geometry or emitter ballast resistor) (166) radially symmetric regions
257/167257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (167) having at least four external electrodes
257/168257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (168) with means to increase breakdown voltage
257/169257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (168) with means to increase breakdown voltage (169) high resistivity base layer
257/170257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (168) with means to increase breakdown voltage (170) surface feature (e.g., guard ring, groove, mesa, etc.)
257/171257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (168) with means to increase breakdown voltage (170) surface feature (e.g., guard ring, groove, mesa, etc.) (171) edge feature (e.g., beveled edge)
257/172257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (172) with means to lower "on" voltage drop
257/173257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (173) device protection (e.g., from overvoltage)
257/174257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (173) device protection (e.g., from overvoltage) (174) rate of rise of current (e.g., di/dt)
257/175257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (175) with means to control triggering (e.g., gate electrode configuration, zener diode firing, dv/dt control, transient control by ferrite bead, etc.)
257/176257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (175) with means to control triggering (e.g., gate electrode configuration, zener diode firing, dv/dt control, transient control by ferrite bead, etc.) (176) located in an emitter-gate region
257/177257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (177) with housing or external electrode
257/178257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (177) with housing or external electrode (178) with means to avoid stress between electrode and active device (e.g., thermal expansion matching of electrode to semiconductor)
257/179257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (177) with housing or external electrode (178) with means to avoid stress between electrode and active device (e.g., thermal expansion matching of electrode to semiconductor) (179) with malleable electrode (e.g., silver electrode layer)
257/180257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (177) with housing or external electrode (180) stud mount
257/181257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (177) with housing or external electrode (181) with large area flexible electrodes in press contact with opposite sides of active semiconductor chip and surrounded by an insulating element, (e.g., ring)
257/182257 active solid-state devices (e.g., transistors, solid-state diodes)/(107) regenerative type switching device (e.g., scr, comfet, thyristor) (177) with housing or external electrode (181) with large area flexible electrodes in press contact with opposite sides of active semiconductor chip and surrounded by an insulating element, (e.g., ring) (182) with lead feedthrough means on side of housing
257/183257 active solid-state devices (e.g., transistors, solid-state diodes)/(183) heterojunction device
257/183.1257 active solid-state devices (e.g., transistors, solid-state diodes)/(183) heterojunction device (183.1) charge transfer device
257/184257 active solid-state devices (e.g., transistors, solid-state diodes)/(183) heterojunction device (184) light responsive structure
257/185257 active solid-state devices (e.g., transistors, solid-state diodes)/(183) heterojunction device (184) light responsive structure (185) staircase (including graded composition) device
257/186257 active solid-state devices (e.g., transistors, solid-state diodes)/(183) heterojunction device (184) light responsive structure (186) avalanche photodetection structure
257/187257 active solid-state devices (e.g., transistors, solid-state diodes)/(183) heterojunction device (184) light responsive structure (187) having transistor structure
257/188257 active solid-state devices (e.g., transistors, solid-state diodes)/(183) heterojunction device (184) light responsive structure (188) having narrow energy band gap (
257/189257 active solid-state devices (e.g., transistors, solid-state diodes)/(183) heterojunction device (184) light responsive structure (188) having narrow energy band gap ( (189) layer is a group iii-v semiconductor compound
257/190257 active solid-state devices (e.g., transistors, solid-state diodes)/(183) heterojunction device (190) with lattice constant mismatch (e.g., with buffer layer to accommodate mismatch)
257/191257 active solid-state devices (e.g., transistors, solid-state diodes)/(183) heterojunction device (191) having graded composition
257/192257 active solid-state devices (e.g., transistors, solid-state diodes)/(183) heterojunction device (192) field effect transistor
257/194257 active solid-state devices (e.g., transistors, solid-state diodes)/(183) heterojunction device (192) field effect transistor (194) doping on side of heterojunction with lower carrier affinity (e.g., high electron mobility transistor (hemt))
257/195257 active solid-state devices (e.g., transistors, solid-state diodes)/(183) heterojunction device (192) field effect transistor (194) doping on side of heterojunction with lower carrier affinity (e.g., high electron mobility transistor (hemt)) (195) combined with diverse type device
257/196257 active solid-state devices (e.g., transistors, solid-state diodes)/(183) heterojunction device (196) both semiconductors of the heterojunction are the same conductivity type (i.e., either n or p)
257/197257 active solid-state devices (e.g., transistors, solid-state diodes)/(183) heterojunction device (197) bipolar transistor
257/198257 active solid-state devices (e.g., transistors, solid-state diodes)/(183) heterojunction device (197) bipolar transistor (198) wide band gap emitter
257/199257 active solid-state devices (e.g., transistors, solid-state diodes)/(183) heterojunction device (199) avalanche diode (e.g., so-called "zener" diode having breakdown voltage greater than 6 volts, including heterojunction impatt type microwave diodes)
257/200257 active solid-state devices (e.g., transistors, solid-state diodes)/(183) heterojunction device (200) heterojunction formed between semiconductor materials which differ in that they belong to different periodic table groups (e.g., ge (group iv) - gaas (group iii-v) or inp (group iii-v) - cdte (group ii-vi))
257/201257 active solid-state devices (e.g., transistors, solid-state diodes)/(183) heterojunction device (201) between different group iv-vi or ii-vi or iii-v compounds other than gaas/gaalas
257/202257 active solid-state devices (e.g., transistors, solid-state diodes)/(202) gate arrays
257/203257 active solid-state devices (e.g., transistors, solid-state diodes)/(202) gate arrays (203) with particular chip input/output means
257/204257 active solid-state devices (e.g., transistors, solid-state diodes)/(202) gate arrays (204) having specific type of active device (e.g., cmos)
257/205257 active solid-state devices (e.g., transistors, solid-state diodes)/(202) gate arrays (204) having specific type of active device (e.g., cmos) (205) with bipolar transistors or with fets of only one channel conductivity type (e.g., enhancement-depletion fets)
257/206257 active solid-state devices (e.g., transistors, solid-state diodes)/(202) gate arrays (204) having specific type of active device (e.g., cmos) (206) particular layout of complementary fets with regard to each other
257/207257 active solid-state devices (e.g., transistors, solid-state diodes)/(202) gate arrays (207) with particular power supply distribution means
257/208257 active solid-state devices (e.g., transistors, solid-state diodes)/(202) gate arrays (208) with particular signal path connections
257/209257 active solid-state devices (e.g., transistors, solid-state diodes)/(202) gate arrays (208) with particular signal path connections (209) programmable signal paths (e.g., with fuse elements, laser programmable, etc)
257/210257 active solid-state devices (e.g., transistors, solid-state diodes)/(202) gate arrays (208) with particular signal path connections (210) with wiring channel area
257/211257 active solid-state devices (e.g., transistors, solid-state diodes)/(202) gate arrays (208) with particular signal path connections (211) multi-level metallization
257/212257 active solid-state devices (e.g., transistors, solid-state diodes)/(212) conductivity modulation device (e.g., unijunction transistor, double-base diode, conductivity-modulated transistor)
257/213257 active solid-state devices (e.g., transistors, solid-state diodes)/(213) field effect device
257/214257 active solid-state devices (e.g., transistors, solid-state diodes)/(213) field effect device (214) charge injection device
257/215257 active solid-state devices (e.g., transistors, solid-state diodes)/(213) field effect device (215) charge transfer device
257/216257 active solid-state devices (e.g., transistors, solid-state diodes)/(213) field effect device (215) charge transfer device (216) majority signal carrier (e.g., buried or bulk channel, or peristaltic)
257/217257 active solid-state devices (e.g., transistors, solid-state diodes)/(213) field effect device (215) charge transfer device (216) majority signal carrier (e.g., buried or bulk channel, or peristaltic) (217) having a conductive means in direct contact with channel (e.g., non-insulated gate)
257/218257 active solid-state devices (e.g., transistors, solid-state diodes)/(213) field effect device (215) charge transfer device (216) majority signal carrier (e.g., buried or bulk channel, or peristaltic) (218) high resistivity channel (e.g., accumulation mode) or surface channel (e.g., transfer of signal charge occurs at the surface of the semiconductor) or minority carriers at input (i.e., surface channel input)
257/219257 active solid-state devices (e.g., transistors, solid-state diodes)/(213) field effect device (215) charge transfer device (216) majority signal carrier (e.g., buried or bulk channel, or peristaltic) (219) impurity concentration variation
257/220257 active solid-state devices (e.g., transistors, solid-state diodes)/(213) field effect device (215) charge transfer device (216) majority signal carrier (e.g., buried or bulk channel, or peristaltic) (219) impurity concentration variation (220) vertically within channel (e.g., profiled)
257/221257 active solid-state devices (e.g., transistors, solid-state diodes)/(213) field effect device (215) charge transfer device (216) majority signal carrier (e.g., buried or bulk channel, or peristaltic) (219) impurity concentration variation (221) along the length of the channel (e.g., doping variations for transfer directionality)
257/222257 active solid-state devices (e.g., transistors, solid-state diodes)/(213) field effect device (215) charge transfer device (216) majority signal carrier (e.g., buried or bulk channel, or peristaltic) (222) responsive to non-electrical external signal (e.g., imager)
257/223257 active solid-state devices (e.g., transistors, solid-state diodes)/(213) field effect device (215) charge transfer device (216) majority signal carrier (e.g., buried or bulk channel, or peristaltic) (222) responsive to non-electrical external signal (e.g., imager) (223) having structure to improve output signal (e.g., antiblooming drain)
257/224257 active solid-state devices (e.g., transistors, solid-state diodes)/(213) field effect device (215) charge transfer device (216) majority signal carrier (e.g., buried or bulk channel, or peristaltic) (224) channel confinement
257/225257 active solid-state devices (e.g., transistors, solid-state diodes)/(213) field effect device (215) charge transfer device (225) non-electrical input responsive (e.g., light responsive imager, input programmed by size of storage sites for use as a read-only memory, etc.)
257/226257 active solid-state devices (e.g., transistors, solid-state diodes)/(213) field effect device (215) charge transfer device (225) non-electrical input responsive (e.g., light responsive imager, input programmed by size of storage sites for use as a read-only memory, etc.) (226) sensor element and charge transfer device are of different materials or on different substrates (e.g., "hybrid")
257/227257 active solid-state devices (e.g., transistors, solid-state diodes)/(213) field effect device (215) charge transfer device (225) non-electrical input responsive (e.g., light responsive imager, input programmed by size of storage sites for use as a read-only memory, etc.) (227) with specified dopant (e.g., photoionizable, "extrinsic" detectors for infrared)
257/228257 active solid-state devices (e.g., transistors, solid-state diodes)/(213) field effect device (215) charge transfer device (225) non-electrical input responsive (e.g., light responsive imager, input programmed by size of storage sites for use as a read-only memory, etc.) (228) light responsive, back illuminated
257/229257 active solid-state devices (e.g., transistors, solid-state diodes)/(213) field effect device (215) charge transfer device (225) non-electrical input responsive (e.g., light responsive imager, input programmed by size of storage sites for use as a read-only memory, etc.) (229) having structure to improve output signal (e.g., exposure control structure)
257/230257 active solid-state devices (e.g., transistors, solid-state diodes)/(213) field effect device (215) charge transfer device (225) non-electrical input responsive (e.g., light responsive imager, input programmed by size of storage sites for use as a read-only memory, etc.) (229) having structure to improve output signal (e.g., exposure control structure) (230) with blooming suppression structure
257/231257 active solid-state devices (e.g., transistors, solid-state diodes)/(213) field effect device (215) charge transfer device (225) non-electrical input responsive (e.g., light responsive imager, input programmed by size of storage sites for use as a read-only memory, etc.) (231) 2-dimensional area architecture
257/232257 active solid-state devices (e.g., transistors, solid-state diodes)/(213) field effect device (215) charge transfer device (225) non-electrical input responsive (e.g., light responsive imager, input programmed by size of storage sites for use as a read-only memory, etc.) (231) 2-dimensional area architecture (232) having alternating strips of sensor structures and register structures (e.g., interline imager)
257/233257 active solid-state devices (e.g., transistors, solid-state diodes)/(213) field effect device (215) charge transfer device (225) non-electrical input responsive (e.g., light responsive imager, input programmed by size of storage sites for use as a read-only memory, etc.) (231) 2-dimensional area architecture (233) sensors not overlaid by electrode (e.g., photodiodes)
257/234257 active solid-state devices (e.g., transistors, solid-state diodes)/(213) field effect device (215) charge transfer device (225) non-electrical input responsive (e.g., light responsive imager, input programmed by size of storage sites for use as a read-only memory, etc.) (234) single strip of sensors (e.g., linear imager)
257/235257 active solid-state devices (e.g., transistors, solid-state diodes)/(213) field effect device (215) charge transfer device (235) electrical input
257/236257 active solid-state devices (e.g., transistors, solid-state diodes)/(213) field effect device (215) charge transfer device (235) electrical input (236) signal applied to field effect electrode
257/237257 active solid-state devices (e.g., transistors, solid-state diodes)/(213) field effect device (215) charge transfer device (235) electrical input (236) signal applied to field effect electrode (237) charge-presetting/linear input type (e.g., fill and spill)
257/238257 active solid-state devices (e.g., transistors, solid-state diodes)/(213) field effect device (215) charge transfer device (235) electrical input (238) input signal responsive to signal charge in charge transfer device (e.g., regeneration or feedback)
257/239257 active solid-state devices (e.g., transistors, solid-state diodes)/(213) field effect device (215) charge transfer device (239) signal charge detection type (e.g., floating diffusion or floating gate non-destructive output)
257/240257 active solid-state devices (e.g., transistors, solid-state diodes)/(213) field effect device (215) charge transfer device (240) changing width or direction of channel (e.g., meandering channel)
257/241257 active solid-state devices (e.g., transistors, solid-state diodes)/(213) field effect device (215) charge transfer device (241) multiple channels (e.g., converging or diverging or parallel channels)
257/242257 active solid-state devices (e.g., transistors, solid-state diodes)/(213) field effect device (215) charge transfer device (242) vertical charge transfer
257/243257 active solid-state devices (e.g., transistors, solid-state diodes)/(213) field effect device (215) charge transfer device (243) channel confinement
257/244257 active solid-state devices (e.g., transistors, solid-state diodes)/(213) field effect device (215) charge transfer device (244) comprising a groove
257/245257 active solid-state devices (e.g., transistors, solid-state diodes)/(213) field effect device (215) charge transfer device (245) structure for applying electric field into device (e.g., resistive electrode, acoustic traveling wave in channel)
257/246257 active solid-state devices (e.g., transistors, solid-state diodes)/(213) field effect device (215) charge transfer device (245) structure for applying electric field into device (e.g., resistive electrode, acoustic traveling wave in channel) (246) phase structure (e.g., doping variations to provide asymmetry for 2-phase operation; more than four phases or "electrode per bit")
257/247257 active solid-state devices (e.g., transistors, solid-state diodes)/(213) field effect device (215) charge transfer device (245) structure for applying electric field into device (e.g., resistive electrode, acoustic traveling wave in channel) (246) phase structure (e.g., doping variations to provide asymmetry for 2-phase operation; more than four phases or "electrode per bit") (247) uniphase or virtual phase structure
257/248257 active solid-state devices (e.g., transistors, solid-state diodes)/(213) field effect device (215) charge transfer device (245) structure for applying electric field into device (e.g., resistive electrode, acoustic traveling wave in channel) (246) phase structure (e.g., doping variations to provide asymmetry for 2-phase operation; more than four phases or "electrode per bit") (248) 2-phase
257/249257 active solid-state devices (e.g., transistors, solid-state diodes)/(213) field effect device (215) charge transfer device (245) structure for applying electric field into device (e.g., resistive electrode, acoustic traveling wave in channel) (249) electrode structures or materials
257/250257 active solid-state devices (e.g., transistors, solid-state diodes)/(213) field effect device (215) charge transfer device (245) structure for applying electric field into device (e.g., resistive electrode, acoustic traveling wave in channel) (249) electrode structures or materials (250) plural gate levels
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