USPC Patent Classifications

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Class 438 semiconductor device manufacturing: process
uspcdescription
438/1438 semiconductor device manufacturing: process/(1) having biomaterial component or integrated with living organism
438/2438 semiconductor device manufacturing: process/(2) having superconductive component
438/3438 semiconductor device manufacturing: process/(3) having magnetic or ferroelectric component
438/4438 semiconductor device manufacturing: process/(4) repair or restoration
438/5438 semiconductor device manufacturing: process/(5) including control responsive to sensed condition
438/6438 semiconductor device manufacturing: process/(5) including control responsive to sensed condition (6) interconnecting plural devices on semiconductor substrate
438/7438 semiconductor device manufacturing: process/(5) including control responsive to sensed condition (7) optical characteristic sensed
438/8438 semiconductor device manufacturing: process/(5) including control responsive to sensed condition (7) optical characteristic sensed (8) chemical etching
438/9438 semiconductor device manufacturing: process/(5) including control responsive to sensed condition (7) optical characteristic sensed (8) chemical etching (9) plasma etching
438/10438 semiconductor device manufacturing: process/(5) including control responsive to sensed condition (10) electrical characteristic sensed
438/11438 semiconductor device manufacturing: process/(5) including control responsive to sensed condition (10) electrical characteristic sensed (11) utilizing integral test element
438/12438 semiconductor device manufacturing: process/(5) including control responsive to sensed condition (10) electrical characteristic sensed (12) and removal of defect
438/13438 semiconductor device manufacturing: process/(5) including control responsive to sensed condition (10) electrical characteristic sensed (13) altering electrical property by material removal
438/14438 semiconductor device manufacturing: process/(14) with measuring or testing
438/15438 semiconductor device manufacturing: process/(14) with measuring or testing (15) packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor
438/16438 semiconductor device manufacturing: process/(14) with measuring or testing (16) optical characteristic sensed
438/17438 semiconductor device manufacturing: process/(14) with measuring or testing (17) electrical characteristic sensed
438/18438 semiconductor device manufacturing: process/(14) with measuring or testing (17) electrical characteristic sensed (18) utilizing integral test element
438/19438 semiconductor device manufacturing: process/(19) having integral power source (e.g., battery, etc.)
438/20438 semiconductor device manufacturing: process/(20) electron emitter manufacture
438/21438 semiconductor device manufacturing: process/(21) manufacture of electrical device controlled printhead
438/22438 semiconductor device manufacturing: process/(22) making device or circuit emissive of nonelectrical signal
438/23438 semiconductor device manufacturing: process/(22) making device or circuit emissive of nonelectrical signal (23) having diverse electrical device
438/24438 semiconductor device manufacturing: process/(22) making device or circuit emissive of nonelectrical signal (23) having diverse electrical device (24) including device responsive to nonelectrical signal
438/25438 semiconductor device manufacturing: process/(22) making device or circuit emissive of nonelectrical signal (23) having diverse electrical device (24) including device responsive to nonelectrical signal (25) packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor
438/26438 semiconductor device manufacturing: process/(22) making device or circuit emissive of nonelectrical signal (26) packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor
438/27438 semiconductor device manufacturing: process/(22) making device or circuit emissive of nonelectrical signal (26) packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor (27) having additional optical element (e.g., optical fiber, etc.)
438/28438 semiconductor device manufacturing: process/(22) making device or circuit emissive of nonelectrical signal (26) packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor (28) plural emissive devices
438/29438 semiconductor device manufacturing: process/(22) making device or circuit emissive of nonelectrical signal (29) including integrally formed optical element (e.g., reflective layer, luminescent material, contoured surface, etc.)
438/30438 semiconductor device manufacturing: process/(22) making device or circuit emissive of nonelectrical signal (29) including integrally formed optical element (e.g., reflective layer, luminescent material, contoured surface, etc.) (30) liquid crystal component
438/31438 semiconductor device manufacturing: process/(22) making device or circuit emissive of nonelectrical signal (29) including integrally formed optical element (e.g., reflective layer, luminescent material, contoured surface, etc.) (31) optical waveguide structure
438/32438 semiconductor device manufacturing: process/(22) making device or circuit emissive of nonelectrical signal (29) including integrally formed optical element (e.g., reflective layer, luminescent material, contoured surface, etc.) (32) optical grating structure
438/33438 semiconductor device manufacturing: process/(22) making device or circuit emissive of nonelectrical signal (33) substrate dicing
438/34438 semiconductor device manufacturing: process/(22) making device or circuit emissive of nonelectrical signal (34) making emissive array
438/35438 semiconductor device manufacturing: process/(22) making device or circuit emissive of nonelectrical signal (34) making emissive array (35) multiple wavelength emissive
438/36438 semiconductor device manufacturing: process/(22) making device or circuit emissive of nonelectrical signal (36) ordered or disordered
438/37438 semiconductor device manufacturing: process/(22) making device or circuit emissive of nonelectrical signal (37) graded composition
438/38438 semiconductor device manufacturing: process/(22) making device or circuit emissive of nonelectrical signal (38) passivating of surface
438/39438 semiconductor device manufacturing: process/(22) making device or circuit emissive of nonelectrical signal (39) mesa formation
438/40438 semiconductor device manufacturing: process/(22) making device or circuit emissive of nonelectrical signal (39) mesa formation (40) tapered etching
438/41438 semiconductor device manufacturing: process/(22) making device or circuit emissive of nonelectrical signal (39) mesa formation (41) with epitaxial deposition of semiconductor adjacent mesa
438/42438 semiconductor device manufacturing: process/(22) making device or circuit emissive of nonelectrical signal (42) groove formation
438/43438 semiconductor device manufacturing: process/(22) making device or circuit emissive of nonelectrical signal (42) groove formation (43) tapered etching
438/44438 semiconductor device manufacturing: process/(22) making device or circuit emissive of nonelectrical signal (42) groove formation (44) with epitaxial deposition of semiconductor in groove
438/45438 semiconductor device manufacturing: process/(22) making device or circuit emissive of nonelectrical signal (45) dopant introduction into semiconductor region
438/46438 semiconductor device manufacturing: process/(22) making device or circuit emissive of nonelectrical signal (46) compound semiconductor
438/47438 semiconductor device manufacturing: process/(22) making device or circuit emissive of nonelectrical signal (46) compound semiconductor (47) heterojunction
438/48438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal
438/49438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (49) chemically responsive
438/50438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (50) physical stress responsive
438/51438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (50) physical stress responsive (51) packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor
438/52438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (50) physical stress responsive (52) having cantilever element
438/53438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (50) physical stress responsive (53) having diaphragm element
438/54438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (54) thermally responsive
438/55438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (54) thermally responsive (55) packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor
438/56438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (56) responsive to corpuscular radiation (e.g., nuclear particle detector, etc.)
438/57438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation
438/58438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation (58) gettering of substrate
438/59438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation (59) having diverse electrical device
438/60438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation (59) having diverse electrical device (60) charge transfer device (e.g., ccd, etc.)
438/61438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation (61) continuous processing
438/62438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation (61) continuous processing (62) using running length substrate
438/63438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation (63) particulate semiconductor component
438/64438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation (64) packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor
438/65438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation (64) packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor (65) having additional optical element (e.g., optical fiber, etc.)
438/66438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation (64) packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor (66) plural responsive devices (e.g., array, etc.)
438/67438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation (64) packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor (66) plural responsive devices (e.g., array, etc.) (67) assembly of plural semiconductor substrates
438/68438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation (68) substrate dicing
438/69438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation (69) including integrally formed optical element (e.g., reflective layer, luminescent layer, etc.)
438/70438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation (69) including integrally formed optical element (e.g., reflective layer, luminescent layer, etc.) (70) color filter
438/71438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation (69) including integrally formed optical element (e.g., reflective layer, luminescent layer, etc.) (71) specific surface topography (e.g., textured surface, etc.)
438/72438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation (69) including integrally formed optical element (e.g., reflective layer, luminescent layer, etc.) (72) having reflective or antireflective component
438/73438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation (73) making electromagnetic responsive array
438/74438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation (73) making electromagnetic responsive array (74) vertically arranged (e.g., tandem, stacked, etc.)
438/75438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation (73) making electromagnetic responsive array (75) charge transfer device (e.g., ccd, etc.)
438/76438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation (73) making electromagnetic responsive array (75) charge transfer device (e.g., ccd, etc.) (76) majority signal carrier (e.g., buried or bulk channel, peristaltic, etc.)
438/77438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation (73) making electromagnetic responsive array (75) charge transfer device (e.g., ccd, etc.) (77) compound semiconductor
438/78438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation (73) making electromagnetic responsive array (75) charge transfer device (e.g., ccd, etc.) (78) having structure to improve output signal (e.g., exposure control structure, etc.)
438/79438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation (73) making electromagnetic responsive array (75) charge transfer device (e.g., ccd, etc.) (78) having structure to improve output signal (e.g., exposure control structure, etc.) (79) having blooming suppression structure (e.g., antiblooming drain, etc.)
438/80438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation (73) making electromagnetic responsive array (80) lateral series connected array
438/81438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation (73) making electromagnetic responsive array (80) lateral series connected array (81) specified shape junction barrier (e.g., v-grooved junction, etc.)
438/82438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation (82) having organic semiconductor component
438/83438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation (83) forming point contact
438/84438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation (84) having selenium or tellurium elemental semiconductor component
438/85438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation (85) having metal oxide or copper sulfide compound semiconductive component
438/86438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation (85) having metal oxide or copper sulfide compound semiconductive component (86) and cadmium sulfide compound semiconductive component
438/87438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation (87) graded composition
438/88438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation (88) direct application of electric current
438/89438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation (89) fusion or solidification of semiconductor region
438/90438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation (90) including storage of electrical charge in substrate
438/91438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation (91) avalanche diode
438/92438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation (92) schottky barrier junction
438/93438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation (93) compound semiconductor
438/94438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation (93) compound semiconductor (94) heterojunction
438/95438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation (93) compound semiconductor (95) chalcogen (i.e., oxygen (o), sulfur (s), selenium (se), tellurium (te)) containing
438/96438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation (96) amorphous semiconductor
438/97438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation (97) polycrystalline semiconductor
438/98438 semiconductor device manufacturing: process/(48) making device or circuit responsive to nonelectrical signal (57) responsive to electromagnetic radiation (98) contact formation (i.e., metallization)
438/99438 semiconductor device manufacturing: process/(99) having organic semiconductive component
438/100438 semiconductor device manufacturing: process/(100) making point contact device
438/101438 semiconductor device manufacturing: process/(100) making point contact device (101) direct application of electrical current
438/102438 semiconductor device manufacturing: process/(102) having selenium or tellurium elemental semiconductor component
438/103438 semiconductor device manufacturing: process/(102) having selenium or tellurium elemental semiconductor component (103) direct application of electrical current
438/104438 semiconductor device manufacturing: process/(104) having metal oxide or copper sulfide compound semiconductor component
438/105438 semiconductor device manufacturing: process/(105) having diamond semiconductor component
438/106438 semiconductor device manufacturing: process/(106) packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor
438/107438 semiconductor device manufacturing: process/(106) packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor (107) assembly of plural semiconductive substrates each possessing electrical device
438/108438 semiconductor device manufacturing: process/(106) packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor (107) assembly of plural semiconductive substrates each possessing electrical device (108) flip-chip-type assembly
438/109438 semiconductor device manufacturing: process/(106) packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor (107) assembly of plural semiconductive substrates each possessing electrical device (109) stacked array (e.g., rectifier, etc.)
438/110438 semiconductor device manufacturing: process/(106) packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor (110) making plural separate devices
438/111438 semiconductor device manufacturing: process/(106) packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor (110) making plural separate devices (111) using strip lead frame
438/112438 semiconductor device manufacturing: process/(106) packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor (110) making plural separate devices (111) using strip lead frame (112) and encapsulating
438/113438 semiconductor device manufacturing: process/(106) packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor (110) making plural separate devices (113) substrate dicing
438/114438 semiconductor device manufacturing: process/(106) packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor (110) making plural separate devices (113) substrate dicing (114) utilizing a coating to perfect the dicing
438/115438 semiconductor device manufacturing: process/(106) packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor (115) including contaminant removal or mitigation
438/116438 semiconductor device manufacturing: process/(106) packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor (116) having light transmissive window
438/117438 semiconductor device manufacturing: process/(106) packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor (117) incorporating resilient component (e.g., spring, etc.)
438/118438 semiconductor device manufacturing: process/(106) packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor (118) including adhesive bonding step
438/119438 semiconductor device manufacturing: process/(106) packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor (118) including adhesive bonding step (119) electrically conductive adhesive
438/120438 semiconductor device manufacturing: process/(106) packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor (120) with vibration step
438/121438 semiconductor device manufacturing: process/(106) packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor (121) metallic housing or support
438/122438 semiconductor device manufacturing: process/(106) packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor (121) metallic housing or support (122) possessing thermal dissipation structure (i.e., heat sink)
438/123438 semiconductor device manufacturing: process/(106) packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor (121) metallic housing or support (123) lead frame
438/124438 semiconductor device manufacturing: process/(106) packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor (121) metallic housing or support (124) and encapsulating
438/125438 semiconductor device manufacturing: process/(106) packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor (125) insulative housing or support
438/126438 semiconductor device manufacturing: process/(106) packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor (125) insulative housing or support (126) and encapsulating
438/127438 semiconductor device manufacturing: process/(106) packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor (127) encapsulating
438/128438 semiconductor device manufacturing: process/(128) making device array and selectively interconnecting
438/129438 semiconductor device manufacturing: process/(128) making device array and selectively interconnecting (129) with electrical circuit layout
438/130438 semiconductor device manufacturing: process/(128) making device array and selectively interconnecting (130) rendering selected devices operable or inoperable
438/131438 semiconductor device manufacturing: process/(128) making device array and selectively interconnecting (131) using structure alterable to conductive state (i.e., antifuse)
438/132438 semiconductor device manufacturing: process/(128) making device array and selectively interconnecting (132) using structure alterable to nonconductive state (i.e., fuse)
438/133438 semiconductor device manufacturing: process/(133) making regenerative-type switching device (e.g., scr, igbt, thyristor, etc.)
438/134438 semiconductor device manufacturing: process/(133) making regenerative-type switching device (e.g., scr, igbt, thyristor, etc.) (134) bidirectional rectifier with control electrode (e.g., triac, diac, etc.)
438/135438 semiconductor device manufacturing: process/(133) making regenerative-type switching device (e.g., scr, igbt, thyristor, etc.) (135) having field effect structure
438/136438 semiconductor device manufacturing: process/(133) making regenerative-type switching device (e.g., scr, igbt, thyristor, etc.) (135) having field effect structure (136) junction gate
438/137438 semiconductor device manufacturing: process/(133) making regenerative-type switching device (e.g., scr, igbt, thyristor, etc.) (135) having field effect structure (136) junction gate (137) vertical channel
438/138438 semiconductor device manufacturing: process/(133) making regenerative-type switching device (e.g., scr, igbt, thyristor, etc.) (135) having field effect structure (138) vertical channel
438/139438 semiconductor device manufacturing: process/(133) making regenerative-type switching device (e.g., scr, igbt, thyristor, etc.) (139) altering electrical characteristic
438/140438 semiconductor device manufacturing: process/(133) making regenerative-type switching device (e.g., scr, igbt, thyristor, etc.) (140) having structure increasing breakdown voltage (e.g., guard ring, field plate, etc.)
438/141438 semiconductor device manufacturing: process/(141) making conductivity modulation device (e.g., unijunction transistor, double base diode, conductivity-modulated transistor, etc.)
438/142438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions
438/143438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (143) gettering of semiconductor substrate
438/144438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (144) charge transfer device (e.g., ccd, etc.)
438/145438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (144) charge transfer device (e.g., ccd, etc.) (145) having additional electrical device
438/146438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (144) charge transfer device (e.g., ccd, etc.) (146) majority signal carrier (e.g., buried or bulk channel, peristaltic, etc.)
438/147438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (144) charge transfer device (e.g., ccd, etc.) (147) changing width or direction of channel (e.g., meandering channel, etc.)
438/148438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (144) charge transfer device (e.g., ccd, etc.) (148) substantially incomplete signal charge transfer (e.g., bucket brigade, etc.)
438/149438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (149) on insulating substrate or layer (e.g., tft, etc.)
438/150438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (149) on insulating substrate or layer (e.g., tft, etc.) (150) specified crystallographic orientation
438/151438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (149) on insulating substrate or layer (e.g., tft, etc.) (151) having insulated gate
438/152438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (149) on insulating substrate or layer (e.g., tft, etc.) (151) having insulated gate (152) combined with electrical device not on insulating substrate or layer
438/153438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (149) on insulating substrate or layer (e.g., tft, etc.) (151) having insulated gate (152) combined with electrical device not on insulating substrate or layer (153) complementary field effect transistors
438/154438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (149) on insulating substrate or layer (e.g., tft, etc.) (151) having insulated gate (154) complementary field effect transistors
438/155438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (149) on insulating substrate or layer (e.g., tft, etc.) (151) having insulated gate (155) and additional electrical device on insulating substrate or layer
438/156438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (149) on insulating substrate or layer (e.g., tft, etc.) (151) having insulated gate (156) vertical channel
438/157438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (149) on insulating substrate or layer (e.g., tft, etc.) (151) having insulated gate (157) plural gate electrodes (e.g., dual gate, etc.)
438/158438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (149) on insulating substrate or layer (e.g., tft, etc.) (151) having insulated gate (158) inverted transistor structure
438/159438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (149) on insulating substrate or layer (e.g., tft, etc.) (151) having insulated gate (158) inverted transistor structure (159) source-to-gate or drain-to-gate overlap
438/160438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (149) on insulating substrate or layer (e.g., tft, etc.) (151) having insulated gate (158) inverted transistor structure (160) utilizing backside irradiation
438/161438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (149) on insulating substrate or layer (e.g., tft, etc.) (151) having insulated gate (161) including source or drain electrode formation prior to semiconductor layer formation (i.e., staggered electrodes)
438/162438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (149) on insulating substrate or layer (e.g., tft, etc.) (151) having insulated gate (162) introduction of nondopant into semiconductor layer
438/163438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (149) on insulating substrate or layer (e.g., tft, etc.) (151) having insulated gate (163) adjusting channel dimension (e.g., providing lightly doped source or drain region, etc.)
438/164438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (149) on insulating substrate or layer (e.g., tft, etc.) (151) having insulated gate (164) semiconductor islands formed upon insulating substrate or layer (e.g., mesa formation, etc.)
438/165438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (149) on insulating substrate or layer (e.g., tft, etc.) (151) having insulated gate (164) semiconductor islands formed upon insulating substrate or layer (e.g., mesa formation, etc.) (165) including differential oxidation
438/166438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (149) on insulating substrate or layer (e.g., tft, etc.) (151) having insulated gate (166) including recrystallization step
438/167438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (167) having schottky gate (e.g., mesfet, hemt, etc.)
438/168438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (167) having schottky gate (e.g., mesfet, hemt, etc.) (168) specified crystallographic orientation
438/169438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (167) having schottky gate (e.g., mesfet, hemt, etc.) (169) complementary schottky gate field effect transistors
438/170438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (167) having schottky gate (e.g., mesfet, hemt, etc.) (170) and bipolar device
438/171438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (167) having schottky gate (e.g., mesfet, hemt, etc.) (171) and passive electrical device (e.g., resistor, capacitor, etc.)
438/172438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (167) having schottky gate (e.g., mesfet, hemt, etc.) (172) having heterojunction (e.g., hemt, modfet, etc.)
438/173438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (167) having schottky gate (e.g., mesfet, hemt, etc.) (173) vertical channel
438/174438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (167) having schottky gate (e.g., mesfet, hemt, etc.) (174) doping of semiconductive channel region beneath gate (e.g., threshold voltage adjustment, etc.)
438/175438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (167) having schottky gate (e.g., mesfet, hemt, etc.) (175) buried channel
438/176438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (167) having schottky gate (e.g., mesfet, hemt, etc.) (176) plural gate electrodes (e.g., dual gate, etc.)
438/177438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (167) having schottky gate (e.g., mesfet, hemt, etc.) (177) closed or loop gate
438/178438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (167) having schottky gate (e.g., mesfet, hemt, etc.) (178) elemental semiconductor
438/179438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (167) having schottky gate (e.g., mesfet, hemt, etc.) (179) asymmetric
438/180438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (167) having schottky gate (e.g., mesfet, hemt, etc.) (180) self-aligned
438/181438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (167) having schottky gate (e.g., mesfet, hemt, etc.) (180) self-aligned (181) doping of semiconductive region
438/182438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (167) having schottky gate (e.g., mesfet, hemt, etc.) (180) self-aligned (181) doping of semiconductive region (182) t-gate
438/183438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (167) having schottky gate (e.g., mesfet, hemt, etc.) (180) self-aligned (181) doping of semiconductive region (183) dummy gate
438/184438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (167) having schottky gate (e.g., mesfet, hemt, etc.) (180) self-aligned (181) doping of semiconductive region (184) utilizing gate sidewall structure
438/185438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (167) having schottky gate (e.g., mesfet, hemt, etc.) (180) self-aligned (181) doping of semiconductive region (184) utilizing gate sidewall structure (185) multiple doping steps
438/186438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (186) having junction gate (e.g., jfet, sit, etc.)
438/187438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (186) having junction gate (e.g., jfet, sit, etc.) (187) specified crystallographic orientation
438/188438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (186) having junction gate (e.g., jfet, sit, etc.) (188) complementary junction gate field effect transistors
438/189438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (186) having junction gate (e.g., jfet, sit, etc.) (189) and bipolar transistor
438/190438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (186) having junction gate (e.g., jfet, sit, etc.) (190) and passive device (e.g., resistor, capacitor, etc.)
438/191438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (186) having junction gate (e.g., jfet, sit, etc.) (191) having heterojunction
438/192438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (186) having junction gate (e.g., jfet, sit, etc.) (192) vertical channel
438/193438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (186) having junction gate (e.g., jfet, sit, etc.) (192) vertical channel (193) multiple parallel current paths (e.g., grid gate, etc.)
438/194438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (186) having junction gate (e.g., jfet, sit, etc.) (194) doping of semiconductive channel region beneath gate (e.g., threshold voltage adjustment, etc.)
438/195438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (186) having junction gate (e.g., jfet, sit, etc.) (195) plural gate electrodes
438/196438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (186) having junction gate (e.g., jfet, sit, etc.) (196) including isolation structure
438/197438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.)
438/198438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (198) specified crystallographic orientation
438/199438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (199) complementary insulated gate field effect transistors (i.e., cmos)
438/200438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (199) complementary insulated gate field effect transistors (i.e., cmos) (200) and additional electrical device
438/201438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (199) complementary insulated gate field effect transistors (i.e., cmos) (200) and additional electrical device (201) including insulated gate field effect transistor having gate surrounded by dielectric (i.e., floating gate)
438/202438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (199) complementary insulated gate field effect transistors (i.e., cmos) (200) and additional electrical device (202) including bipolar transistor (i.e., bicmos)
438/203438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (199) complementary insulated gate field effect transistors (i.e., cmos) (200) and additional electrical device (202) including bipolar transistor (i.e., bicmos) (203) complementary bipolar transistors
438/204438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (199) complementary insulated gate field effect transistors (i.e., cmos) (200) and additional electrical device (202) including bipolar transistor (i.e., bicmos) (204) lateral bipolar transistor
438/205438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (199) complementary insulated gate field effect transistors (i.e., cmos) (200) and additional electrical device (202) including bipolar transistor (i.e., bicmos) (205) plural bipolar transistors of differing electrical characteristics
438/206438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (199) complementary insulated gate field effect transistors (i.e., cmos) (200) and additional electrical device (202) including bipolar transistor (i.e., bicmos) (206) vertical channel insulated gate field effect transistor
438/207438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (199) complementary insulated gate field effect transistors (i.e., cmos) (200) and additional electrical device (202) including bipolar transistor (i.e., bicmos) (207) including isolation structure
438/208438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (199) complementary insulated gate field effect transistors (i.e., cmos) (200) and additional electrical device (202) including bipolar transistor (i.e., bicmos) (207) including isolation structure (208) isolation by pn junction only
438/209438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (199) complementary insulated gate field effect transistors (i.e., cmos) (200) and additional electrical device (209) including additional vertical channel insulated gate field effect transistor
438/210438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (199) complementary insulated gate field effect transistors (i.e., cmos) (200) and additional electrical device (210) including passive device (e.g., resistor, capacitor, etc.)
438/211438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (199) complementary insulated gate field effect transistors (i.e., cmos) (211) having gate surrounded by dielectric (i.e., floating gate)
438/212438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (199) complementary insulated gate field effect transistors (i.e., cmos) (212) vertical channel
438/213438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (199) complementary insulated gate field effect transistors (i.e., cmos) (213) common active region
438/214438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (199) complementary insulated gate field effect transistors (i.e., cmos) (214) having underpass or crossunder
438/215438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (199) complementary insulated gate field effect transistors (i.e., cmos) (215) having fuse or integral short
438/216438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (199) complementary insulated gate field effect transistors (i.e., cmos) (216) gate insulator structure constructed of diverse dielectrics (e.g., mnos, etc.) or of nonsilicon compound
438/217438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (199) complementary insulated gate field effect transistors (i.e., cmos) (217) doping of semiconductor channel region beneath gate insulator (e.g., threshold voltage adjustment, etc.)
438/218438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (199) complementary insulated gate field effect transistors (i.e., cmos) (218) including isolation structure
438/219438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (199) complementary insulated gate field effect transistors (i.e., cmos) (218) including isolation structure (219) total dielectric isolation
438/220438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (199) complementary insulated gate field effect transistors (i.e., cmos) (218) including isolation structure (220) isolation by pn junction only
438/221438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (199) complementary insulated gate field effect transistors (i.e., cmos) (218) including isolation structure (221) dielectric isolation formed by grooving and refilling with dielectric material
438/222438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (199) complementary insulated gate field effect transistors (i.e., cmos) (218) including isolation structure (221) dielectric isolation formed by grooving and refilling with dielectric material (222) with epitaxial semiconductor layer formation
438/223438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (199) complementary insulated gate field effect transistors (i.e., cmos) (218) including isolation structure (221) dielectric isolation formed by grooving and refilling with dielectric material (223) having well structure of opposite conductivity type
438/224438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (199) complementary insulated gate field effect transistors (i.e., cmos) (218) including isolation structure (221) dielectric isolation formed by grooving and refilling with dielectric material (223) having well structure of opposite conductivity type (224) plural wells
438/225438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (199) complementary insulated gate field effect transistors (i.e., cmos) (218) including isolation structure (225) recessed oxide formed by localized oxidation (i.e., locos)
438/226438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (199) complementary insulated gate field effect transistors (i.e., cmos) (218) including isolation structure (225) recessed oxide formed by localized oxidation (i.e., locos) (226) with epitaxial semiconductor layer formation
438/227438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (199) complementary insulated gate field effect transistors (i.e., cmos) (218) including isolation structure (225) recessed oxide formed by localized oxidation (i.e., locos) (227) having well structure of opposite conductivity type
438/228438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (199) complementary insulated gate field effect transistors (i.e., cmos) (218) including isolation structure (225) recessed oxide formed by localized oxidation (i.e., locos) (227) having well structure of opposite conductivity type (228) plural wells
438/229438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (199) complementary insulated gate field effect transistors (i.e., cmos) (229) self-aligned
438/230438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (199) complementary insulated gate field effect transistors (i.e., cmos) (229) self-aligned (230) utilizing gate sidewall structure
438/231438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (199) complementary insulated gate field effect transistors (i.e., cmos) (229) self-aligned (230) utilizing gate sidewall structure (231) plural doping steps
438/232438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (199) complementary insulated gate field effect transistors (i.e., cmos) (229) self-aligned (232) plural doping steps
438/233438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (199) complementary insulated gate field effect transistors (i.e., cmos) (233) and contact formation
438/234438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (234) including bipolar transistor (i.e., bimos)
438/235438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (234) including bipolar transistor (i.e., bimos) (235) heterojunction bipolar transistor
438/236438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (234) including bipolar transistor (i.e., bimos) (236) lateral bipolar transistor
438/237438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (237) including diode
438/238438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (238) including passive device (e.g., resistor, capacitor, etc.)
438/239438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (238) including passive device (e.g., resistor, capacitor, etc.) (239) capacitor
438/240438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (238) including passive device (e.g., resistor, capacitor, etc.) (239) capacitor (240) having high dielectric constant insulator (e.g., ta2o5, etc.)
438/241438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (238) including passive device (e.g., resistor, capacitor, etc.) (239) capacitor (241) and additional field effect transistor (e.g., sense or access transistor, etc.)
438/242438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (238) including passive device (e.g., resistor, capacitor, etc.) (239) capacitor (241) and additional field effect transistor (e.g., sense or access transistor, etc.) (242) including transistor formed on trench sidewalls
438/243438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (238) including passive device (e.g., resistor, capacitor, etc.) (239) capacitor (243) trench capacitor
438/244438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (238) including passive device (e.g., resistor, capacitor, etc.) (239) capacitor (243) trench capacitor (244) utilizing stacked capacitor structure (e.g., stacked trench, buried stacked capacitor, etc.)
438/245438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (238) including passive device (e.g., resistor, capacitor, etc.) (239) capacitor (243) trench capacitor (245) with epitaxial layer formed over the trench
438/246438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (238) including passive device (e.g., resistor, capacitor, etc.) (239) capacitor (243) trench capacitor (246) including doping of trench surfaces
438/247438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (238) including passive device (e.g., resistor, capacitor, etc.) (239) capacitor (243) trench capacitor (246) including doping of trench surfaces (247) multiple doping steps
438/248438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (238) including passive device (e.g., resistor, capacitor, etc.) (239) capacitor (243) trench capacitor (246) including doping of trench surfaces (248) including isolation means formed in trench
438/249438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (238) including passive device (e.g., resistor, capacitor, etc.) (239) capacitor (243) trench capacitor (246) including doping of trench surfaces (249) doping by outdiffusion from a dopant source layer (e.g., doped oxide, etc.)
438/250438 semiconductor device manufacturing: process/(142) making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions (197) having insulated gate (e.g., igfet, misfet, mosfet, etc.) (238) including passive device (e.g., resistor, capacitor, etc.) (239) capacitor (250) planar capacitor
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